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Número de pieza | TK10A60D | |
Descripción | Switching Regulator Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK10A60D
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
10
40
45
363
10
4.5
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
1
3
2009-09-29
1 page TK10A60D
www.DataSheet4U.com
rth – tw
10
1 DDuutyty=00..55
0.2
0.1
0.1
0.05
0.02
0.01
0.001
10μ
0.01
100μ
SINGLE PULSE
1m
10m
100m
PULSE WIDTH tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
1 10
SAFE OPERATING AREA
100
ID max (pulsed) *
10 ID max (continuous) * 1 ms *
100 μs *
1
DC operation
Tc = 25°C
0.1
0.01 *: SINGLE NONREPETITIVE PULSE
Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
0.001 TEMPERATURE.
1 10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50
75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 6.36mH
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TK10A60D.PDF ] |
Número de pieza | Descripción | Fabricantes |
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TK10A60D | Switching Regulator Applications | Toshiba Semiconductor |
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