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N08M163WL1A Schematic ( PDF Datasheet ) - NanoAmp Solutions

Teilenummer N08M163WL1A
Beschreibung 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
Hersteller NanoAmp Solutions
Logo NanoAmp Solutions Logo 




Gesamt 8 Seiten
N08M163WL1A Datasheet, Funktion
NanoAmp Solutions, Inc.
N08M163WL1A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
www.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
512Kx16 bit
Overview
Features
The N08M163WL1A is an integrated memory
device intended for non life-support (Class 1 or
2) medical applications. This device is a 4
megabit memory organized as 524,288 words by
16 bits. The device is designed and fabricated
using NanoAmp’s advanced CMOS technology
with reliability inhancements for medical users. The
base design is the same as NanoAmp’s
N08M1618L2A, which has further reliability
processing for life-support (Class 3) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. Byte
controls (UB and LB) allow the upper and lower
bytes to be accessed independently and can also
be used to deselect the device. This device is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in a JEDEC standard BGA package
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
1.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Special processing for Soft Error Rate (SER)
reduction
• Automatic power down to standby mode
• Compact space saving BGA package avail-
able
Part Number Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Max Max
N08M163WL1AB 48 - BGA
-40oC to +85oC
N08M163WL1AD Known Good Die
2.3V - 3.6V
70ns @ 2.7V
100ns @ 2.3V
20 µA
3 mA @ 1MHz
Pin Configurations
Pin Descriptions
123456
A LB OE A0
B I/O8 UB A3
C I/O9 I/O10 A5
A1 A2 CE2
A4 CE1 I/O0
A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Pin BGA (top)
8 x 10 mm
Pin Name
A0-A18
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Stock No. 23319-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1






N08M163WL1A Datasheet, Funktion
NanoAmp Solutions, Inc.
N08M163WL1Awww.DataSheet4U.com
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC
Address
tAA
CE1#
CE2
OE#
LB#, UB#
Data Out
tCO
tLZ(2)
tOE
tOLZ
tLBLZ, tUBLZ
High-Z
tLB, tUB
Data Valid
tHZ(1,2)
tOHZ(1)
tLBHZ, tUBHZ
Data Valid
Stock No. 23319-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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