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N04L163WC1C Schematic ( PDF Datasheet ) - NanoAmp Solutions

Teilenummer N04L163WC1C
Beschreibung 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
Hersteller NanoAmp Solutions
Logo NanoAmp Solutions Logo 




Gesamt 10 Seiten
N04L163WC1C Datasheet, Funktion
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N04L163WC1C
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
Features
The N04L163WC1C is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L163WC1C is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
• Ultra Low Power Sort Available
Part Number
N04L163WC1CZ1
N04L163WC1CT1
Package Type
VFBGA Pb-Free
44-TSOP II Pb-Free
Operating
Power
Temperature Supply (Vcc)
-40oC to +85oC 2.2V - 3.6V
Speed
Options
55ns
Standby Operating
Current
Current
(ISB), Typical (Icc), Typical
2 µA
1.5 mA @
1MHz
Pin Configurations
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 VSS
33 VCC
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 NC
27 A8
26 A9
25 A10
24 A11
23 A12
123456
A LB OE A0 A1 A2 NC
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 DNU A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin VFBGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
A0-A17
WE
CE
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
DNU
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Do Not Use
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1






N04L163WC1C Datasheet, Funktion
NanoAmp Solutions, Inc.
N04L163WC1C
Advance wInwfwo.DramtaShaeteti4oUn.com
Timing Waveform of Write Cycle (WE control)
tWC
Address
CE
tAW
tCW
tLBW, tUBW
tWR
LB, UB
tAS
WE
tWP
tDW
tDH
Data In
High-Z
tWHZ
Data Valid
tOW
Data Out
High-Z
Timing Waveform of Write Cycle (CE Control)
tWC
Address
CE
LB, UB
tAW
tCW
tAS
tLBW, tUBW
tWR
tWP
WE
tDW tDH
Data In
Data Out
Data Valid
tLZ
tWHZ
High-Z
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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