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N04L163WC1A Schematic ( PDF Datasheet ) - NanoAmp Solutions

Teilenummer N04L163WC1A
Beschreibung 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
Hersteller NanoAmp Solutions
Logo NanoAmp Solutions Logo 




Gesamt 11 Seiten
N04L163WC1A Datasheet, Funktion
NanoAmp Solutions, Inc.
N04L163WC1A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
www.DataSheet4U.com
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
Features
The N04L163WC1A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L163WC1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Options
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
N04L163WC1AB
48 - BGA
N04L163WC1AT
44 - TSOP II
N04L163WC1AB1 48 - BGA Pb-Free -40oC to +85oC 2.3V - 3.6V 70ns@ 2.7V
4 µA
2 mA @ 1MHz
N04L163WC1AT2 44 - TSOP II Green
(DOC# 14-02-018 REV I ECN# 01-1001)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1






N04L163WC1A Datasheet, Funktion
NanoAmp Solutions, Inc.
N04L163WC1Aw w w . D a t a S h e
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
tRC
tAA
tCO
tOE
tLB, tUB
tLZ
tOLZ
tLBZ, tUBZ
tHZ
tOHZ
tLBHZ, tUBHZ
tOH
-70
2.3 - 2.65 V
2.7 - 3.6 V
Min. Max. Min. Max.
85 70
85 70
85 70
30 25
85 70
10 10
55
10 10
0 20 0 20
0 20 0 20
0 20 0 20
10 10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC 85
70 ns
tCW 50
50 ns
tAW 50
50 ns
tLBW, tUBW
50
50 ns
tWP 40
40 ns
tAS 0
0 ns
tWR 0
0 ns
tWHZ 20 20 ns
tDW 40
40 ns
tDH 0
0 ns
tOW 5
5 ns
(DOC# 14-02-018 REV I ECN# 01-1001)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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