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N04L1630C2B Schematic ( PDF Datasheet ) - AMI SEMICONDUCTOR

Teilenummer N04L1630C2B
Beschreibung 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY
Hersteller AMI SEMICONDUCTOR
Logo AMI SEMICONDUCTOR Logo 




Gesamt 12 Seiten
N04L1630C2B Datasheet, Funktion
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N04L1630C2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAMs
256K × 16 bit POWER SAVER TECHNOLOGY TM
Overview
The N04L1630C2B is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N04L1630C2B is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
operating power while improving the performance
over standard SRAMs. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 256Kb x
16 SRAMs.
Features
• Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
1uA (Typical)
• Very low operating current
2.0mA at 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast output enable access time
30ns OE Access Time
55ns Random Access Time
30ns Page Mode Access Time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• RoHS Compliant TSOP and BGA packages
Product Family
Part Number
Package Type
Operating
Power
Speed
Temperature Supply (Vcc) Options
N04L1630C2BB2 48-BGA Green
-40oC to +85oC 2.7V - 3.6V
N04L1630C2BT2 44-TSOP II Green
55ns
70ns
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
1µA 2 mA @ 1MHz
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
1






N04L1630C2B Datasheet, Funktion
AMI Semiconductor, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N04L1630C2B
Advance wInfwormw a.tioD na t a S h e
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
Timing
Item
Read Cycle Time
Address Access Time
Page Mode Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
tRC
tAA
tAAP
tCO
tOE
tBE
tLZ
tOLZ
tBZ
tHZ
tOHZ
tBHZ
tOH
tWC
tCW
tAW
tBW
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
-55
Min. Max.
55
55
30
55
30
55
10
5
10
0 20
0 20
0 20
10
-70
Min. Max.
70
70
35
70
35
70
10
5
10
0 20
0 20
0 20
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
55 70 ns
45 50 ns
45 50 ns
45 50 ns
40 40 ns
0 0 ns
0 0 ns
20 20 ns
40 40 ns
0 0 ns
5 5 ns
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

6 Page









N04L1630C2B pdf, datenblatt
AMI Semiconductor, Inc.
Ordering Information
N04L1630C2BX-XX I
N04L1630C2B
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Performance
55 = 55ns
70 = 70ns
Package Type
B2 = 48-ball BGA Green (RoHS Compliant)
T2 = 44-pin TSOP II Green (RoHS Compliant)
Revision History
Revision
A
B
C
D
E
F
G
H
I
Date
April 2003
August 2004
January 2005
January 2005
March 22, 2005
June 9, 2005
Dec. 2005
July 2006
September 2006
Change Description
Initial Advanced Release
Changed part number to -30 from -3W and Vcc range to 2.7 V - 3.6V
Change IDR = 5 µA, ICC(typ) = 2.5mA.
Modified page mode address A1-A4 configuration.
General Update
Changed tWP and tDW to 40ns for -55 and -70, to 45ns for -85
Added TSOP II Green Package Ordering Option
Added RoHS Compliant
Added BGA package
Converted to AMI Semiconductor
© 2006 AMI Semiconductor, Inc. All rights reserved.
AMI Semiconductor, Inc. ("AMIS") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
AMIS does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
AMIS makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does AMIS assume any liability arising out of the application or use of
any product or circuit described herein. AMIS does not authorize use of its products as critical components in any application in which the failure of the AMIS product may be
expected to result in significant injury or death, including life support systems and critical medical instruments.
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

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