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PDF MRF7S35120HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF7S35120HSR3 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Motorola Semiconductors | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
•
TPPyuopulstice=aWl1P2id0utlhsWe=adt1tPs0e0Prfeμoasrekmc(a,2nD4cueWt:yaVCtDtsyDcAl=evg3=.2)2,V0Po%ultlss,eIdDQSig=n1a5l,0f
mA,
= 3500
MHz,
Power Gain — 12 dB
Drain Efficiency — 40%
•
Typical WiMAX
Pout = 18 Watts
PAevrgf.o,rfm=a3n5ce0:0VMDHDz=,
32 Volts,
802.16d,
6ID4QQ=A9M003/m4,A4,
Bursts,
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain — 13 dB
Drain Efficiency — 16%
RCE — - 33 dB (EVM — 2.2% rms)
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak
Power
• Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S35120HS
www.DRaetavS.he1e,t46U/.2co0m08
MRF7S35120HSR3
3100- 3500 MHz, 120 W PEAK, 32 V
PULSED
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465A - 06, STYLE 1
NI - 780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +65
- 6.0, +10
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
RθJC
°C/W
Case Temperature 79°C, 120 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
0.11
Case Temperature 72°C, 120 W Pulsed, 500 μsec Pulse Width, 10% Duty Cycle
0.12
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S35120HSR3
1
1 page  
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
1000 Coss 100
100 Ciss
10
Crss
1
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
0.1
0 5 10 15 20 25 30 35
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain - Source Voltage
TJ = 200°C
10 TJ = 175°C
TJ = 150°C
TC = 25°C
1
1
10
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
100
13
f = 3500 MHz
12
3300 MHz
11
3100 MHz
10
Gps
ηD
50
41
32
23
9
VDD = 32 Vdc, IDQ = 150 mA
14
Pulse Width = 100 μsec
Duty Cycle = 20%
85
3 10
100 200
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
56
P3dB = 52 dBm (157 W)
55
P2dB = 51.7 dBm (149 W)
54
Ideal
53 P1dB = 51.3 dBm (135 W)
52
51
Actual
50
49
VDD = 32 Vdc, IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
48
36 37 38 39 40 41 42 43 44 45
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
14
IDQ = 1000 mA
13
12 500 mA
300 mA
11
10 150 mA
9 VDD = 32 Vdc, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
8
1 10 100 200
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
13
12
32 V
11
10
9
8
IDQ = 150 mA, f = 3500 MHz
7 Pulse Width = 100 μsec
Duty Cycle = 20%
6
3 10
30 V
28 V
26 V
VDD = 24 V
100 200
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF7S35120HSR3
5
5 Page 
www.DataSheet4U.com
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© Freescale Semiconductor, Inc. 2008. All rights reserved.
RDFocDumevenict eNuDmabtear: MRF7S35120HS
FRreeve. s1,c6a/2le00S8 emiconductor
MRF7S35120HSR3
11
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| PDF Descargar | [ Datasheet MRF7S35120HSR3.PDF ] | |
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