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PDF RE46C168 Data sheet ( Hoja de datos )
| Número de pieza | RE46C168 | |
| Descripción | CMOS Photoelectric Smoke Detector ASIC | |
| Fabricantes | Microchip Technology | |
| Logotipo |  |
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RE46C165/6/7/8
CMOS Photoelectric Smoke Detector ASIC
with Interconnect, Timer Mode and Alarm Memory
Features
• Temporal Horn Pattern or Continuous Tone
• Alarm Memory
• Sensitivity Control Times:
- 9 minutes (RE46C165/6)
- 1.2 minutes (RE46C167/8)
• I/O Filter and Charge Dump
• Interconnect up to 40 Detectors
• Internal Power-on Reset (POR)
• >2000V ESD Protection (HBM) on All Pins
• Low Quiescent Current Consumption (<8 µA)
• Internal Low Battery Detection and Chamber Test
• RoHS Compliant Lead-Free Packaging
Description
The RE46C165/6/7/8 devices are low-power, CMOS
photoelectric type, smoke detector ICs. With minimal
external components, these circuits will provide all the
required features for a photoelectric type smoke
detector.
Each design incorporates a gain-selectable photo
amplifier for use with an infrared emitter/detector pair.
An internal oscillator strobes power to the smoke
detection circuitry for 100 µs, every 10 seconds, to
keep standby current to a minimum. If smoke is
sensed, the detection rate is increased to verify an
alarm condition. A High-Gain mode is available for
push button chamber testing.
A check for a low battery condition and chamber
integrity is performed every 43 seconds when in
standby. The temporal horn pattern supports the
NFPA 72 emergency evacuation signal.
An interconnect pin allows multiple detectors to be
connected so when one unit alarms, all units will sound.
A charge dump feature will quickly discharge the
interconnect line when exiting a local alarm. The
interconnect input is also digitally filtered.
An internal timer allows for single button, push-to-test
to be used for a Reduced Sensitivity mode.
An alarm memory feature allows the user to determine
if the unit has previously entered a local alarm
condition.
Utilizing low-power CMOS technology, the
RE46C165/6/7/8 was designed for use in smoke
detectors that comply with Underwriters Laboratory
Specification UL217 and UL268.
2010-2016 Microchip Technology Inc.
DS20002251B-page 1
1 page  
RE46C165/6/7/8
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDD ................................................................................... 12.5V
Input Voltage Range except FEED, I/O......VIN = -0.3V to VDD + 0.3V
FEED Input Voltage Range....................... VINFD = -10 to +22V
I/O Input Voltage Range..................................VIO1= -0.3 to 15V
Input Current except FEED, TEST, VSEN ............... IIN = 10 mA
Input Current for FEED, VSEN ............................... IIN = 500 µA
Operating Temperature ...................................TA = -25 to +75°C
Storage Temperature ...............................TSTG = -55 to +125°C
Maximum Junction Temperature............................ TJ = +150°C
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these, or any other conditions above those
indicated in the operation listings of this specification, is
not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS(3)
DC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = -25° to +75°, VDD = 9V,
Typical Application (unless otherwise noted), VSS = 0V
Parameter Symbol Test Pin Min. Typ. Max. Units
Conditions
Supply Voltage
Supply Current
VDD
5
6
— 12
IDD1
5
—
4
6
IDD2
5
— 5.5
8
IDD3
5
—
—
2
IDD4
5
—
—
3
Input Voltage High
VIH1
10
6.2
4.5
VIH2
7
3.2
—
—
—
VIH3
15
1.6
—
—
VIH4
16
8.5
—
—
Input Voltage Low
VIL1
10
—
4.5 2.7
VIL2
7
—
— 1.5
VIL3
15
VIL4
16
Input Leakage Low IIL1 1, 2, 3
—
—
—
— 0.5
—7
— -100
IIL2 12, 10
IIL3 15, 16
ILFD
10
Input Leakage High
IIH1
1, 2
—
—
—
—
— -100
— -1
— -50
— 100
Note 1:
2:
3:
IIH2 3, 10, 12
—
— 100
IHFD
10
—
—
50
Does not include Q3 emitter current.
Not production tested.
Production tested at room temperature with guardbanded limits.
V Operating
µA COSC = VSS, LED off
µA COSC = VSS, LED off,
VDD = 12V
mA COSC = VSS,
STROBE on IRED off
mA COSC = VSS,
STROBE on, IRED on
(Note 1)
V FEED
V No local alarm,
I/O as an input
V VSEN
V TEST
V FEED
V No local alarm,
I/O as an input
V VSEN
V TEST
nA VDD = 12V, COSC = 12V,
STROBE active
nA VDD = 12V, VIN = VSS
µA VDD = 12V, VIN = VSS
µA FEED = -10V
nA VDD = 12V, VIN = VDD,
STROBE active
nA VDD = 12V, VIN = VDD
µA FEED = 22V
2010-2016 Microchip Technology Inc.
DS20002251B-page 5
5 Page 
RE46C165/6/7/8
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1: PIN FUNCTION TABLE
RE46C165/6/7/8
PDIP, SOIC
Symbol
Function
1 C1 High-Gain Capacitor Pin
2 C2 Normal Gain Capacitor Pin
3
DETECT
Photo Diode Input
4
STROBE
Strobed Detection Negative Supply
5 VDD Positive Power Supply
6
IRED
Infrared Emitting Diode Pin
7 IO Interconnect Pin
8 HB Horn Brass, Inverted Output
9 HS Horn Silver Output
10
FEED
Horn Feedback Pin
11 LED LED Driver Pin
12
COSC
Oscillator Capacitor Input
13
ROSC
Oscillator Resistor Drive Low
14 VSS Negative Power Supply
15
VSEN
Hush Timer Sensitivity Pin
16
TEST
Test Pin
2.1 High/Normal Gain Capacitor Pins
(C1, C2)
The capacitor connected to the C1 pin sets the photo
amplifier gain (high) for the push-to-test and chamber
sensitivity test. The size of this capacitor will depend on
the chamber background reflections. A = 1 + (C1/10),
where C1 is expressed in pF. The gain should be
<10000.
The capacitor connected to the C2 pin sets the photo
amplifier gain (normal) during standby. The value of this
capacitor will depend on the smoke sensitivity required.
A = 1 + (C2/10), where C2 is expressed in pF.
2.2 Photo Diode Input (DETECT)
This input is normally connected to the cathode of an
external photo diode operated at zero bias.
2.3 Strobed Detection
Negative Supply (STROBE)
Regulated output voltage of VDD – 5, which is active
during a test for smoke. This output is the negative side
of the photo amplifier reference circuitry.
2.4 Positive Power Supply (VDD)
The VDD pin is the device’s positive power supply input.
2.5 Infrared Emitting Diode Pin (IRED)
Provides a regulated pulsed output voltage pre-driver
for the infrared emitter. This output usually drives the
base of an NPN transistor.
2.6 Interconnect Pin (I/O)
This bidirectional pin provides the capability to
interconnect many detectors in a single system. This
pin has an internal pull-down device.
2.7 Horn Brass, Inverted Output (HB)
The HB pin is connected to the metal electrode of a
piezoelectric transducer.
2.8 Horn Silver Output Pin (HS)
The HS pin is a complementary output to HB and
connects to the ceramic electrode of the piezoelectric
transducer.
2010-2016 Microchip Technology Inc.
DS20002251B-page 11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet RE46C168.PDF ] | |
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