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Teilenummer | NJG1142KA1 |
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Beschreibung | WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC | |
Hersteller | New Japan Radio | |
Logo | ||
Gesamt 18 Seiten NJG1142KA1www.DataSheet4U.com
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
GENERAL DESCRIPTION
The NJG1142KA1 is a wide band low noise amplifier GaAs MMIC
designed for mobile TV application. And this amplifier can be tuned to
wide frequency (170~1680MHz).
The NJG1142KA1 has a LNA pass-through function to select high
gain mode or low gain mode by low control voltage operation. The
NJG1142KA1 features low current consumption, high linearity.
An ultra-small and ultra-thin package of FLP6-A1 is adopted.
FEATURES
Wide operating frequency range 170MHz~1680MHz
Low voltage operation
2.8V typ.
[High gain mode]
Low current consumption
6mA typ.
High gain
+14.0dB typ.
Low noise figure
1.5dB typ.
High P-0.1dB Compression
0dBm typ.
High input IP3
+2.0dBm typ.
[Low gain mode]
Low current consumption
11μA typ.
Gain (Low loss)
-1.0dB typ.
High P-0.1dB Compression
+17dBm typ.
High input IP3
+22.0dBm typ.
PACKAGE OUTLINE
NJG1142KA1
External components count
Small package size
Lead -free and halogen-free
3 pcs. (capacitor: 2pcs, inductor: 1pc)
FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ.)
PIN CONFIGURATION
(Top View)
4
GND
3
RFOUT
5 Bias
GND circuit
Logic
6 circuit
RFIN
2
GND
1
VCTL
1Pin INDEX
PIN CONNECTION
1. VCTL
2. GND
3. RFOUT
4. GND
5. GND
6. RFIN
TRUTH TABLE
VCTL
H
L
“H” = VCTL(H) “L” = VCTL(L)
LNA Mode
High Gain Mode
Low Gain Mode
NOTE: The information on this datasheet is subject to change without notice
Ver.2010-05-21
-1-
NJG1142KA1
ELECTRICAL CHARACTERISTICS(High Gain Mode)
(Condition :Ta=+25℃, VCTL=1.8V, Zs=Zl=50ohm, with application circuit)
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NF, Gain vs. VDD
(freq=620MHz)
4 16
3.5 14
Gain
3 12
2.5 10
2 NF
1.5
8
6
14
0.5 2
(Exclude PCB, Connector Losses)
00
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
IIP3, OIP3 vs. VDD
(f1=620MHz, f2=f1+100kHz, Pin=-26dBm)
20
OIP3
15
P-1dB(IN) vs. VDD
(freq=620MHz)
10
5
0
-5
-10
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
VSWR vs. VDD
(freq=620MHz)
3
2.5
10 2 VSWRo
5
IIP3
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
Isolation vs. VDD
(freq=620MHz)
0
-5
-10
-15
-20
-25
-30
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
1.5
VSWRi
1
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
IDD vs. VDD
(RF OFF)
10
8
6
4
2
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
-6-
6 Page NJG1142KA1
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ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(Condition : VDD=2.8V, VCTL=0V, Zs=Zl=50ohm, with application circuit)
Gain vs. Temperature
(freq=620MHz)
0
P-1dB(IN) vs. Tempareture
(freq=620MHz)
25
-1
20
-2
15
-3
10
-4
-5
-40
-20
0 20 40 60
Temperature (oC)
80 100
5
-40 -20
0 20 40 60
Tempareture (oC)
80 100
IIP3, OIP3 vs. Temperature
(f1=620MHz, f2=f1+100kHz, Pin=-8dBm)
30
IIP3
25
OIP3
20
15
10
-40
-20
0 20 40 60
Temperature (oC)
80 100
VSWR vs. Temperature
(freq=620MHz)
2
1.8
1.6
1.4
VSWRi
1.2
VSWRo
1
-40 -20 0 20 40 60
Temperature (oC)
80 100
IDD vs. Temperature
(RF OFF)
30
25
20
15
10
5
0
-40 -20
0 20 40 60
Temperature (oC)
80 100
IDD vs. VCTL
(RF OFF)
8
7
6
5
4
3
2
-40oC
+25oC
-20oC
+60oC
1 0oC +85oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCTL (V)
- 12 -
12 Page | ||
Seiten | Gesamt 18 Seiten | |
PDF Download | [ NJG1142KA1 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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