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NJG1142KA1 Schematic ( PDF Datasheet ) - New Japan Radio

Teilenummer NJG1142KA1
Beschreibung WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
Hersteller New Japan Radio
Logo New Japan Radio Logo 




Gesamt 18 Seiten
NJG1142KA1 Datasheet, Funktion
NJG1142KA1www.DataSheet4U.com
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
GENERAL DESCRIPTION
The NJG1142KA1 is a wide band low noise amplifier GaAs MMIC
designed for mobile TV application. And this amplifier can be tuned to
wide frequency (170~1680MHz).
The NJG1142KA1 has a LNA pass-through function to select high
gain mode or low gain mode by low control voltage operation. The
NJG1142KA1 features low current consumption, high linearity.
An ultra-small and ultra-thin package of FLP6-A1 is adopted.
FEATURES
Wide operating frequency range 170MHz~1680MHz
Low voltage operation
2.8V typ.
[High gain mode]
Low current consumption
6mA typ.
High gain
+14.0dB typ.
Low noise figure
1.5dB typ.
High P-0.1dB Compression
0dBm typ.
High input IP3
+2.0dBm typ.
[Low gain mode]
Low current consumption
11μA typ.
Gain (Low loss)
-1.0dB typ.
High P-0.1dB Compression
+17dBm typ.
High input IP3
+22.0dBm typ.
PACKAGE OUTLINE
NJG1142KA1
External components count
Small package size
Lead -free and halogen-free
3 pcs. (capacitor: 2pcs, inductor: 1pc)
FLP6-A1 (package size: 1.6mm x 1.6mm x 0.55mm typ.)
PIN CONFIGURATION
(Top View)
4
GND
3
RFOUT
5 Bias
GND circuit
Logic
6 circuit
RFIN
2
GND
1
VCTL
1Pin INDEX
PIN CONNECTION
1. VCTL
2. GND
3. RFOUT
4. GND
5. GND
6. RFIN
TRUTH TABLE
VCTL
H
L
“H” = VCTL(H) “L” = VCTL(L)
LNA Mode
High Gain Mode
Low Gain Mode
NOTE: The information on this datasheet is subject to change without notice
Ver.2010-05-21
-1-






NJG1142KA1 Datasheet, Funktion
NJG1142KA1
ELECTRICAL CHARACTERISTICS(High Gain Mode)
(Condition :Ta=+25, VCTL=1.8V, Zs=Zl=50ohm, with application circuit)
www.DataSheet4U.com
NF, Gain vs. VDD
(freq=620MHz)
4 16
3.5 14
Gain
3 12
2.5 10
2 NF
1.5
8
6
14
0.5 2
(Exclude PCB, Connector Losses)
00
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
IIP3, OIP3 vs. VDD
(f1=620MHz, f2=f1+100kHz, Pin=-26dBm)
20
OIP3
15
P-1dB(IN) vs. VDD
(freq=620MHz)
10
5
0
-5
-10
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
VSWR vs. VDD
(freq=620MHz)
3
2.5
10 2 VSWRo
5
IIP3
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
Isolation vs. VDD
(freq=620MHz)
0
-5
-10
-15
-20
-25
-30
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
1.5
VSWRi
1
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
IDD vs. VDD
(RF OFF)
10
8
6
4
2
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDD (V)
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6 Page









NJG1142KA1 pdf, datenblatt
NJG1142KA1
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (Low Gain Mode)
(Condition : VDD=2.8V, VCTL=0V, Zs=Zl=50ohm, with application circuit)
Gain vs. Temperature
(freq=620MHz)
0
P-1dB(IN) vs. Tempareture
(freq=620MHz)
25
-1
20
-2
15
-3
10
-4
-5
-40
-20
0 20 40 60
Temperature (oC)
80 100
5
-40 -20
0 20 40 60
Tempareture (oC)
80 100
IIP3, OIP3 vs. Temperature
(f1=620MHz, f2=f1+100kHz, Pin=-8dBm)
30
IIP3
25
OIP3
20
15
10
-40
-20
0 20 40 60
Temperature (oC)
80 100
VSWR vs. Temperature
(freq=620MHz)
2
1.8
1.6
1.4
VSWRi
1.2
VSWRo
1
-40 -20 0 20 40 60
Temperature (oC)
80 100
IDD vs. Temperature
(RF OFF)
30
25
20
15
10
5
0
-40 -20
0 20 40 60
Temperature (oC)
80 100
IDD vs. VCTL
(RF OFF)
8
7
6
5
4
3
2
-40oC
+25oC
-20oC
+60oC
1 0oC +85oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCTL (V)
- 12 -

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