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PDF EMP213 Data sheet ( Hoja de datos )

Número de pieza EMP213
Descripción 12.5 - 15.5 GHz Power Amplifier MMIC
Fabricantes Excelics Semiconductor 
Logotipo Excelics Semiconductor Logotipo



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No Preview Available ! EMP213 Hoja de datos, Descripción, Manual

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UPDATED 05/08/2008
EMP213
12.5 – 15.5 GHz Power Amplifier MMIC
FEATURES
12.5 – 15.5 GHz Operating Frequency Range
27.0dBm Output Power at 1dB Compression
16.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 17dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2250um X 1130um
Thickness: 85um ± 15um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=400mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F Operating Frequency Range
12.5
15.5
GHz
P1dB
Output Power at 1dB Gain Compression
26.0
27.0
dBm
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 17dBm
Ids = 60% +10%Idss
14.0
16.0
dB
-41 -38 dBc
Input RL
Input Return Loss
-12 -8 dB
Output RL Output Return Loss
-8 -5 dB
NF Noise Figure
9 dB
Idss
VDD
Rth
Saturated Drain Current
VDS =3V, VGS =0V 475 620 750 mA
Drain Voltage
78V
Thermal Resistance (Au-Sn Eutectic Attach)
22 oC/W
Tb Operating Base Plate Temperature
-35 +85 ºC
MAXIMUM RATINGS AT 25°C1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
Vds Drain to Source Voltage
12V
VGS Gate to Source Voltage
Ids Drain Current
-8V
Idss
IGSF Forward Gate Current
57mA
PIN Input Power
24dBm
TCH Channel Temperature
175°C
TSTG
Storage Temperature
-65/175°C
PT Total Power Dissipation
6.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH –Tb)/RTH
CONTINUOUS
8V
-4V
650mA
9.5 mA
@ 3dB compression
150°C
-65/150°C
5.2W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised May 2008

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