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PDF K3089 Data sheet ( Hoja de datos )
| Número de pieza | K3089 | |
| Descripción | MOSFET ( Transistor ) - 2SK3089 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3089 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2SK3089
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
2SK3089
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 20 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 30 V)
z Enhancement mode
: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
40
80
50
134
40
5
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
Rth (ch−c)
Rth (ch−a)
Max Unit
2.5 °C / W
83.3 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 60 μH, RG = 25 Ω, IAR = 40 A
Note 3: Repetitive rating pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2006-11-16
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K3089.PDF ] | |
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