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PDF SSM6P26TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6P26TU | |
| Descripción | High Speed Switching Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6P26TU
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6P26TU
High Speed Switching Applications
• Optimum for high-density mounting in small packages
• Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V)
Ron = 330mΩ (max) (@VGS = -2.5 V)
Ron = 980mΩ (max) (@VGS = -1.8 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Unit: mm
2.1±0.1
1.7±0.1
16
25
34
Drain-Source voltage
VDS -20 V
Gate-Source voltage
VGSS ± 8 V
Drain current
DC
Pulse
Drain power dissipation
ID
-0.5
A
IDP -1.5
PD 500 mW
(Note 1)
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Channel temperature
Tch 150 °C
Storage temperature range
Tstg
−55~150
°C
UF6
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
―
2-2T1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking
Equivalent Circuit (top view)
654
654
PI Q1
Q2
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1 2007-11-01
1 page  
SSM6P26TU
www.DataSheet4U.com
1000
rth – tw
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
100
10
1
0.001
0.01
0.1 1 10
Pulse width tw (s)
100 1000
5 2007-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM6P26TU.PDF ] | |
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