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PDF SSM6L16FE Data sheet ( Hoja de datos )
| Número de pieza | SSM6L16FE | |
| Descripción | High Speed Switching Applications Analog Switch Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM6L16FE (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L16FE
SSM6L16FE
www.DataSheet4U.com
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low on-resistance
Q1: Ron = 4 Ω (max) (@VGS = 2.5 V)
Q2: Ron = 12 Ω (max) (@VGS = −2.5 V)
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
VDS
VGSS
ID
IDP
Rating
20
±10
100
200
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
VDS
VGSS
ID
IDP
Rating
-20
±10
-100
-200
Unit
V
V
mA
Unit
V
V
mA
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
JEDEC
JEITA
TOSHIBA
―
―
2-2N1D
Absolute Maximum Ratings (Q1, Q2 Common)
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
PD (Note 1)
Tch
Tstg
150
150
−55~150
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Total
(25.4
rating, mounted on FR4 board
mm × 25.4 mm × 1.6 t, Cu Pad:
0.135
mm2
×
6)
0.3 mm
1 2007-11-01
1 page  
Q1 (N-ch MOSFET)
250
200
10
150
2.5
43
2.3
ID – VDS
2.1
Common source
Ta = 25°C
1.9
100 1.7
50 1.5
VGS = 1.3 V
0
0 0.5 1 1.5 2
Drain-Source voltage VDS (V)
SSM6L16FE
www.DataSheet4U.com
1000
100
Common source
VDS = 3 V
ID – VGS
Ta = 100°C
10
25°C
1
−25°C
0.1
0.01
0
12
Gate-Source voltage VGS (V)
3
RDS (ON) – ID
12
Common source
Ta = 25°C
10
8
6 VGS = 1.5 V
4
2.5 V
2
4V
0
1 10 100 1000
Drain current ID (mA)
RDS (ON) – VGS
6
Common source
ID = 10 mA
5
4
3
Ta = 100°C
2
25°C
1
−25°C
0
0 2 4 6 8 10
Gate-Source voltage VGS (V)
RDS (ON) – Ta
8
Common source
6
VGS = 1.5 V, ID = 1 mA
4
2.5 V, 10 mA
2
4 V, 10 mA
0
−25 0
25 50
75 100 125 150
Ambient temperature Ta (°C)
Vth – Ta
2
Common source
ID = 0.1 mA
1.6 VDS = 3 V
1.2
0.8
0.4
0
−25 0
25 50
75 100 125 150
Ambient temperature Ta (°C)
5 2007-11-01
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSM6L16FE.PDF ] | |
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