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PDF TPCF8003 Data sheet ( Hoja de datos )
| Número de pieza | TPCF8003 | |
| Descripción | Notebook PC Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCF8003
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCF8003
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.)
（VGS= 4.5V）
• Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V
(VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
Tch
Tstg
20
20
±12
7
28
2.5
0.7
3.2
3.5
150
−55 to 150
V
V
V
A
W
W
mJ
A
°C
°C
1. Drain
2. Drain
3. Drain
4. Gate
5.Source
6. Drain
7. Drain
8. Drain
JEDEC
―
JEITA
―
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
50.0 °C/W
178.6 °C/W
Note: For Notes 1 to 3, refer to the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2010-01-14
1 page  
RDS (ON) – Ta
50
Common source
Pulse test
40
30
VGS = 2.5 V
ID = 1.8, 3.5, 7 A
20
VGS = 4.5 V
10
ID = 1.8, 3.5, 7 A
0
−80
−40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCF8003
www.DataSheet4U.com
IDR – VDS
100
4.5 2.5
10
1
10 VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0
0
−0.2 −0.4
−0.6 −0.8
−1
−1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
100
Ciss
Coss
Crss
10 Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1 1
10
Drain-source voltage VDS (V)
100
Vth – Ta
2
1.6
1.2
0.8
Common source
0.4 VDS = 10 V
ID = 0.2 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
PD – Ta
3.0 (1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(1) t = 5 s
2.5
2.0
1.5
1.0
(2)
0.5
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output characteristics
20
VDS
16
10
8
12 4 6
VDD = 16 V
8 84
Common source
ID = 7 A
4
Ta = 25°C
Pulse test
2
00
0 4 8 12 16
Total gate charge Qg (nC)
5 2010-01-14
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCF8003.PDF ] | |
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