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Número de pieza | TPC8216-H | |
Descripción | High-Efficiency DC/DC Converter Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8216-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 3.4 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 13.6 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 19 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single-pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD 2)
EAS
IAR
EAR
Tch
Tstg
30
30
±20
6.4
25.6
1.5
1.1
0.75
0.45
53
6.4
0.13
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
℃
℃
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1E
Weight: 0.085 g (typ.)
Circuit Configuration
87
65
12
34
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating” Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-02-23
1 page 30
Common source
Pulse test
25
RDS (ON) – Ta
ID = 1.6,3.2,6.4 A
20
15 VGS = 4.5 V
10 VGS = 10 V
5
ID = 1.6,3.2,6.4 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8216-H
www.DataSheet4U.com
100 Common source
Ta = 25°C
Pulse test
10
IDR – VDS
4.5 3
10
1
VGS = 0 V
1
0.1
0
−0.2
−0.4 −0.6 −0.8 −1.0
−1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
3
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 0.1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
1.6 (1)
1.2 (2)
0.8 (3)
(4)
0.4
PD – Ta
Device mounted on a Glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
t=10s
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50 20
Common source
ID = 6.4 A
40
Ta = 25°C
Pulse test
16
30
VDS = 24 V
20
12
10
6
VGS
6
12
VDD = 24 V
12
8
4
00
0 2 4 6 8 10 12 14 16
Total Gate charge Qg (nC)
5 2009-02-23
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TPC8216-H.PDF ] |
Número de pieza | Descripción | Fabricantes |
TPC8216-H | High-Efficiency DC/DC Converter Applications | Toshiba Semiconductor |
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