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PDF 2SK4022 Data sheet ( Hoja de datos )
| Número de pieza | 2SK4022 | |
| Descripción | DC/DC Converter and Motor Drive Application | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK4022 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK4022
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4022
Switching Regulator, DC/DC Converter and
Motor Drive Applications
• 4 V gate drive
• Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.2 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 250 V)
• Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
６．５±０．２
５．２±０．２
０．９
２．３ ２．３
Unit: mm
０．６ MAX．
１．１±０．２
０．６ MAX
Absolute Maximum Ratings (Ta = 25°C)
１２３
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
250
250
±20
3
6
20
36.2
3
2
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
０．８ MAX．
１．1 MAX．
０．６±０．１５
０．６±０．１５
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25 °C/W
125 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C, L = 6.7 mH, IAR = 3 A, RG = 25Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-21
1 page  
2SK4022
www.DataSheet4U.com
10
5
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.1
0.05 0.02
0.03 0.01
0.05
0.01
10 μ
100 μ
rth – tw
Single pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
1m
10 m
100 m
1
10
Pulse width tw (S)
Safe operating area
100
50
30
10
ID max (pulsed) *
5
3 ID max (continuous)
100 μs *
1 ms *
1 DC
0.5
0.3
0.1
* Single nonrepetitive pulse
0.05 Tc = 25°C
0.03 Curves must be derated linearly
with increase in temperature.
VDSS max
0.01
1
3 5 10
30 50 100
300 500 1000
Drain-source voltage VDS (V)
EAS – Tch
100
80
60
40
20
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 50 V, L = 6.7 mH
Waveform
EΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-21
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK4022.PDF ] | |
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