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PDF MRF8S19140HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8S19140HSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• 1BT1ya0pn0idcwamliAdSt,ihnPg=olue3t--.=8C43a4rMriWHerzaW,ttIsn--pCAuvDtgMS.,iAgIQnPaeMlrPafoAgrnRmita=und7ce.e5C: dVliBpDpD@in=g0,2.C801hV%aonltPnser,olIDbaQb=ility
on CCDF.
Frequency
Gps
(dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
1930 MHz
1960 MHz
1990 MHz
18.8
19.1
19.3
31.7
31.4
31.5
6.4 --38.5
6.5 --38.8
6.5 --38.8
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 191 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 138 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF8S19140H
www.DRaetavS.he0e,t45U/.2co0m10
MRF8S19140HR3
MRF8S19140HSR3
1930--1990 MHz, 34 W AVG., 28 V
CDMA, W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF8S19140HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S19140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 34 W CW, 28 Vdc, IDQ = 1100 mA, 1960 MHz
Case Temperature 80°C, 140 W CW, 28 Vdc, IDQ = 1100 mA, 1960 MHz
RθJC
0.48
0.45
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S19140HR3 MRF8S19140HSR3
1
1 page  
TYPICAL CHARACTERISTICS
20
19.8
VDD = 28 Vdc, Pout = 34 W (Avg.)
IDQ = 1100 mA
19.6
19.4
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
19.2 Input Signal PAR = 7.5 dB @
19 0.01% Probability on CCDF
ηD
Gps
36
34
32
30
28
--34
18.8 --35
18.6
PARC
--36
18.4 IRL
--37
18.2
18
ACPR
--38
--39
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 34 Watts Avg.
www.DataSheet4U.com
00
--7 --0.5
--14 --1
--21 --1.5
--28 --2
--35 --2.5
--10
VDD = 28 Vdc, Pout = 55 W (PEP), IDQ = 1100 mA
Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 1960 MHz
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
--50 IM7--L
--60
1
IM7--U
10
100
TWO--TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
20
1 VWD--DC=DM28AV, 3d.c8,4IDMQH=z1C1h0a0nmneAl,Bf a=n1d9w6id0thMHz, Single--Carrier
57
--20
19 0
51 --25
--1 dB = 33 W
ηD
18 --1
45 --30
17 --2
ACPR
16 --3
--2 dB = 45 W
--3 dB = 61 W
39
Gps
33
--35
--40
15 --4
27 --45
Input Signal PAR = 7.5 dB @ 0.01%
14
Probability on CCDF
--5
PARC
21
--50
20 40 60 80 100 120
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
RF Device Data
Freescale Semiconductor
MRF8S19140HR3 MRF8S19140HSR3
5
5 Page 
www.DataSheet4U.com
RF Device Data
Freescale Semiconductor
MRF8S19140HR3 MRF8S19140HSR3
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MRF8S19140HSR3.PDF ] | |
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