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PDF MWE6IC9080NR1 Data sheet ( Hoja de datos )
| Número de pieza | MWE6IC9080NR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
Document Number: MWE6IC9080N
www.DRaetavS.he0e,t44U/.2co0m10
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip
matching that makes it usable from 865 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
•
Typical GSM
630 mA, Pout
P=e8r0foWrmaattnsceC:WVDD
=
28
Volts,
IDQ1
=
230
mA,
IDQ2
=
Frequency
Gps
(dB)
PAE
(%)
MWE6IC9080NR1
MWE6IC9080GNR1
MWE6IC9080NBR1
865--960 MHz, 80 W CW, 28 V
GSM, GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
29.0 49.7
940 MHz
28.8 51.6
960 MHz
28.5 52.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
• Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW
Pout
• Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 =
630 mA, Pout = 35 Watts Avg.
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
CASE 1618--02
TO--270 WB--14
PLASTIC
MWE6IC9080NR1
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MWE6IC9080GNR1
920 MHz 30.0 37.0
940 MHz 30.0 37.8
960 MHz 29.5 38.0
Features
--62
--62
--62
--75 0.8
--75 1.2
--75 1.5
CASE 1617--02
TO--272 WB--14
PLASTIC
MWE6IC9080NBR1
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
VGS2
VGS1
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
NC
VDS1
VVGGSS12
NC
RFin
RFin
NC
VGS1
VGS2
VDS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14 RFout /VDS2
13 RFout /VDS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
1
1 page  
VDS1
C17
C22
www.DataSheet4U.com
C7
C8
C11
MWE6IC9080N
Rev. 2
C14
C13
R1
C15
VGS1
C16 R2
C12
C19
VGS2
C18
VDS1
VDS2
C20
C1 C24
C3
C23
C4
C2 C5 C6 C25
C21 VDS2
C10
C9
*C6 is mounted vertically.
Figure 3. MWE6IC9080NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MWE6IC9080NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
C1, C2
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
C3, C4
4.7 pF Chip Capacitors
ATC100B4R7CT500XT
C5, C7, C8, C9, C10, C11, C12,
C13, C14
33 pF Chip Capacitors
ATC100B330JT500XT
C6
4.3 pF Chip Capacitor
ATC100B4R3CT500XT
C15, C16, C17, C18, C19, C20,
C21
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
C22, C23
470 μF, 63 V Electrolytic Capacitors, Radial
MCGPR63V477M13X26--RH
C24
0.1 pF Chip Capacitor
ATC100B0R1BT500XT
C25
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
R1, R2
4.12 KΩ, 1/4 W Chip Resistors
CRCW12064K12FKEA
PCB
0.030″, εr = 2.8
IS680–280
Manufacturer
ATC
ATC
ATC
ATC
Murata
Multicomp
ATC
ATC
Vishay
Isola
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
5
5 Page 
www.DataSheet4U.com
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
11
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet MWE6IC9080NR1.PDF ] | |
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