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PDF BF1216 Data sheet ( Hoja de datos )
| Número de pieza | BF1216 | |
| Descripción | Dual N-channel dual gate MOSFET | |
| Fabricantes | NXP Semiconductors | |
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BF1216
Dual N-channel dual gate MOSFET
Rev. 01 — 29 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and very good cross modulation performance during AGC. Integrated diodes between the
gates and source protect against excessive input voltage surges. The transistor is
available as a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications running on a 5 V
supply voltage
digital and analog television tuners
professional communication equipment
1 page  
NXP Semiconductors
www.DataSheet4U.com
BF1216
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
Table 8. Dynamic characteristics for amplifier A and B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA.
Symbol Parameter
Conditions
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
transducer power gain
noise figure
cross modulation
f = 100 MHz; Tj = 25 °C; ID = 18 mA
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
amplifier A; BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
amplifier B; BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 % at 40 dB AGC; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
Min Typ Max Unit
23 27 38 mS
[1] - 2.5 -
pF
[1] - 2.4 -
pF
[1] - 0.8 -
pF
[1] -
25 -
fF
[1]
- 34 -
- 30 -
- 26 -
[1]
dB
dB
dB
- 34 - dB
- 30 - dB
- 26 - dB
- - 5 dB
- 1.0 - dB
- 1.5 - dB
[2]
90 104 -
- 100 -
- 104 -
105 107 -
dBμV
dBμV
dBμV
dBμV
[1] Calculated from S-parameters.
[2] Measured in Figure 17 test circuit.
BF1216_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 17
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NXP Semiconductors
www.DataSheet4U.com
BF1216
Dual N-channel dual gate MOSFET
8.2 Scattering parameters for amplifiers A and B
Table 9. Scattering parameters for amplifiers A and B
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; Z0 = 50 Ω; typical values.
f (MHz) s11 s21 s12 s22
Magnitude Angle
(ratio)
(degree)
Magnitude Angle
(ratio)
(degree)
Magnitude Angle
(ratio)
(degree)
Magnitude
(ratio)
40
0.9910
−4.73
2.76
175.80
0.00074
99.46
0.9946
100 0.9888 −9.07
2.75
171.94
0.00150
86.12
0.9941
200 0.9853 −18.19 2.73
163.86
0.00292
79.56
0.9929
300 0.9762 −27.09 2.69
155.90
0.00420
74.12
0.9916
400 0.9656 −35.80 2.65
148.17
0.00540
69.71
0.9900
500 0.9502 −44.45 2.59
140.50
0.00634
65.32
0.9882
600 0.9331 −52.89 2.52
132.96
0.00709
61.01
0.9855
700 0.9155 −61.08 2.45
125.69
0.00751
57.66
0.9830
800 0.8966 −69.01 2.38
118.59
0.00782
54.58
0.9810
900 0.8755 −76.72 2.30
111.71
0.00792
52.37
0.9798
1 000
0.8550
−84.10
2.22
105.07
0.00783
50.60
0.9785
Angle
(degree)
−1.29
−2.65
−5.31
−7.92
−10.49
−13.05
−15.66
−18.24
−20.75
−23.19
−25.68
8.3 Noise data for amplifiers A and B
Table 10. Noise data for amplifiers A and B
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA, Tamb = 25 °C; typical values.
f (MHz)
NFmin (dB)
Γopt
(ratio)
400 1.0
0.788
800 1.5
0.673
(degree)
28.9
58.8
rn (ratio)
0.903
0.725
BF1216_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
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