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PDF QS8K21 Data sheet ( Hoja de datos )
| Número de pieza | QS8K21 | |
| Descripción | 4V Drive Nch Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Nch + Nch MOSFET
QS8K21
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
Application
Switching
Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : K21
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8K21
Taping
TR
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD *2
Tch
Tstg
45
20
4
12
1
12
1.5
1.25
150
55 to +150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Inner circuit
(8) (7) (6)
(5)
∗2 ∗2
∗1 ∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
83.3
100
Unit
°C / W /TOTAL
°C / W /ELEMENT
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.02 - Rev.A
1 page  
QS8K21
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
VGS
IG(Const.)
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate charge measurement circuit
Data Sheet
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Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate charge waveform
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.02 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet QS8K21.PDF ] | |
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