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DIM1200NSM17-E000 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DIM1200NSM17-E000
Beschreibung Single Switch IGBT Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
DIM1200NSM17-E000 Datasheet, Funktion
DIM1200NSM17-E000
www.DataSheet4U.com
DIM1200NSM17-E000
Single Switch IGBT Module
Replaces June 2004 version, issue PDS5644-2.0
FEATURES
I Trench Gate Field Stop Technology
I Low Conduction Losses
I Low Switching Losses
I 10µs Short Circuit Withstand
I Isolated MMC Base with AlN Substrates
I High Thermal Cycling Capability
APPLICATIONS
I High Reliability Inverters
G Wind Turbines
G Motor Controllers
G UPS Systems
I Traction
G Propulsion Drives
G Auxiliaries
KEY PARAMETERS
VCES
VCE(sat) *
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.0V
1200A
2400A
*Measured at auxiliary terminals.
PDS5644-3.0 July 2004
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM1200NSM17-E000 is a single switch 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200NSM17-E000
Note: When ordering, please use the complete part number.
C1
E1
E2
G
E2
C1
C2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code: N
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9






DIM1200NSM17-E000 Datasheet, Funktion
DIM1200NSM17-E000
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 Tcase = 25˚C
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
0.5 1.0 1.5 2.0 2.5 3.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
3.5
4.0
2400
Common emitter
2200 Tcase = 125˚C
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
5.0
500
Conditions:
Tcase = 125ºC
450 Vcc = 900V
Rg(on) = 1.2 ohms
400 Rg(off) = 1.5 ohms
350
300
250
200
150
100
50
Eon
Eoff
Erec
0
0 200 400 600 800 1000 1200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
2000
Conditions:
Tcase = 125ºC
IC = 1200A
Vcc = 900V
1500
1000
500
Eon
Eoff
Erec
0
024 68
Gate resistance, Rg - (ohms)
Fig. 6 Typical switching energy vs gate resistance
10
6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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