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VND810-E Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer VND810-E
Beschreibung DOUBLE CHANNEL HIGH SIDE DRIVER
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 



Gesamt 20 Seiten
		
VND810-E Datasheet, Funktion
www.DataSheet4U.com
VND810-E
DOUBLE CHANNEL HIGH SIDE DRIVER
Table 1. General Features
Type
RDS(on)
VND810-E
(*) Per each channel
160 m(*)
Iout
3.5A (*)
VCC
36 V
s CMOS COMPATIBLE INPUTS
s OPEN DRAIN STATUS OUTPUTS
s ON STATE OPEN LOAD DETECTION
s OFF STATE OPEN LOAD DETECTION
s SHORTED LOAD PROTECTION
s UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s PROTECTION AGAINST LOSS OF GROUND
s VERY LOW STAND-BY CURRENT
s REVERSE BATTERY PROTECTION (**)
s IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
Figure 1. Package
SO-16
DESCRIPTION
The VND810-E is a monolithic device designed in
STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground.
Active VCC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects open
load condition both in on and off state. Output
shorted to VCC is detected in the off state. Device
automatically turns off in case of ground pin
disconnection.
Table 2. Order Codes
Package
SO-16
VND810-E
Tube
Note: (**) See application schematic at page 9
Tape and Reel
VND810TR-E
October 2004
Rev. 1
1/20






VND810-E Datasheet, Funktion
VND810-E
Figure 5.
OPEN LOAD STATUS TIMING (with external pull-up)
VINn
VOUT> VOL
IOUT < IOL
VSTAT n
tDOL(off)
tDOL(on)
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OVERTEMP STATUS TIMING
VINn
Tj > TTSD
VSTAT n
tSDL
tSDL
Table 12. Truth Table
CONDITIONS
Normal Operation
Current Limitation
Overtemperature
Undervoltage
Overvoltage
Output Voltage > VOL
Output Current < IOL
INPUT
L
H
L
H
H
L
H
L
H
L
H
L
H
L
H
OUTPUT
L
H
L
X
X
L
L
L
L
L
L
H
H
L
H
SENSE
H
H
H
(Tj < TTSD) H
(Tj > TTSD) L
H
L
X
X
H
H
L
H
H
L
6/20

6 Page







VND810-E pdf, datenblatt
VND810-E
Figure 16. On State Resistance Vs Tcase
Ron (mOhm)
400
350
Iout=0.5A
300
Vcc=8V; 13V & 36V
250
200
150
100
50
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Figure 17. Openload On State Detection
Threshold
Iol (mA)
60
55
50 Vcc=13V
Vin=5V
45
40
35
30
25
20
15
10
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Figure 18. Input High Level
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
12/20
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Figure 19. On State Resistance Vs VCC
Ron (mOhm)
300
275
Iout=0.5A
250
225
Tc= 150°C
200
175
150
Tc= 25°C
125
100
Tc= - 40°C
75
50
5 10 15 20 25 30 35
Vcc (V)
40
Figure 20. Openload Off State Detection
Threshold
Vol (V)
5
4.5
Vin=0V
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Figure 21. Input Low Level
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)

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