PDF PMEM4020APD Data sheet ( Hoja de datos )

Número de pieza	PMEM4020APD
Descripción	PNP transistor/Schottky rectifer module
Fabricantes	NXP Semiconductors
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No Preview Available ! PMEM4020APD www.DataSheet4U. PNP transistor/Schottky rectiﬁer module Rev. 01 — 4 October 2004 Product data sheet 1. Product proﬁle 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectiﬁer with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020AND. 1.2 Features s 600 mW total power dissipation s High current capability up to 2 A s Reduces printed-circuit board area required s Reduces pick and place costs s Small plastic SMD package s Transistor x Low collector-emitter saturation voltage. s Diode x Ultra high-speed switching x Very low forward voltage x Guard ring protected. 1.3 Applications s DC-to-DC converters s Inductive load drivers s General purpose load drivers s Reverse polarity protection circuits s MOSFET drivers. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit PNP transistor VCEO collector-emitter voltage open base - - −40 V IC collector current (DC) continuous; [1] - - −2 A Ts ≤ 55 °C 1 page Philips Semiconductors PMEM4020APD www.DataSheet PNP transistor/Schottky rectiﬁer module 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise speciﬁed. Symbol Parameter Conditions PNP transistor ICBO ICEO collector-base cut-off current collector-emitter cut-off current VCB = −40 V; IE = 0 A VCB = −40 V; IE = 0 A; Tj = 150 °C VCE = −30 V; IB = 0 A IEBO emitter-base cut-off VEB = −5 V; IC = 0 A current hFE VCEsat RCEsat DC current gain collector-emitter saturation voltage equivalent on-resistance VCE = −5 V; IC = −1 mA VCE = −5 V; IC = −100 mA VCE = −5 V; IC = −500 mA VCE = −5 V; IC = −1 A VCE = −5 V; IC = −2 A IC = −100 mA; IB = −1 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −100 mA IC = −2 A; IB = −200 mA IC = −1 A; IB = −100 mA VBEsat base-emitter saturation voltage IC = −1 A; IB = −100 mA VBEon base-emitter turn-on VCE = −5 V; IC = −1 A voltage fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz Schottky barrier rectiﬁer VF continuous forward see Figure 1 voltage IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 1000 mA IR reverse current see Figure 2 VR = 10 V VR = 40 V Cd diode capacitance VR = 1 V; f = 1 MHz; see Figure 3 [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Min - - - - 300 300 250 160 [1] 50 - - - - [1] - [1] - [1] - 150 - [1] - [1] - [1] - [1] - [1] - [1] - [1] - - 9397 750 13707 Product data sheet Rev. 01 — 4 October 2004 Typ Max Unit - −100 nA - −50 µA - −100 nA - −100 nA -- -- - 900 -- -- - −120 mV - −145 mV - −260 mV - −530 mV 180 280 mΩ - −1.1 V - −1.0 V - - MHz - 10 pF 95 130 mV 155 210 mV 220 270 mV 295 350 mV 540 640 mV 7 20 µA 30 100 µA 43 48 pF © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 5 of 13 5 Page Philips Semiconductors PMEM4020APD www.DataSheet4U.com PNP transistor/Schottky rectiﬁer module 11. Revision history Table 9: Revision history Document ID Release date Data sheet status PMEM4020APD_1 20041004 Product data sheet Change notice Order number Supersedes - 9397 750 13707 - 9397 750 13707 Product data sheet Rev. 01 — 4 October 2004 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 11 of 13 11 Page

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