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PDF IXTP2R4N50P Data sheet ( Hoja de datos )
| Número de pieza | IXTP2R4N50P | |
| Descripción | PolarHV Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHVTM Power
MOSFET
Advance Technical Information
IXTP 2R4N50P
IXTY 2R4N50P
IXTP 2R4N50P
IXTY 2R4N50P
V = 500 VDSS
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ID25 = 2.4 A
RDS(on) ≤ 3.75
Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSM
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Transient
Continuous
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 50 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-220
TO-252
(TO-220)
Maximum Ratings TO-220 (IXTP)
500
500
± 40
± 30
2.4
4.5
2.4
8
100
V
V
V
V G DS
A
A
A TO-252 AA (IXTY)
mJ
mJ
(TAB)
10 V/ns
55
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
4g
0.8 g
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packageS
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 25 μA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
± 50 nA
1 μA
50 μA
3.75 Ω
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99445(09/05)
1 page  
IXTP 2R4N50P
IXTY 2R4N50P
10.00
Fig. 13. Maxim um Transient Therm al Resistance
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1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP2R4N50P.PDF ] | |
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