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PDF STW4N150 Data sheet ( Hoja de datos )

Número de pieza STW4N150
Descripción Very High Voltage PowerMESH MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! STW4N150 Hoja de datos, Descripción, Manual

STP4N150 - STF4N150
STW4N150www.DataSheet4U.com
N-CHANNEL 1500V - 5- 4A TO-220/TO-220FP/TO-247
Very High Voltage PowerMESH™ MOSFET
Table 1: General Features
Figure 1: Package
PRODUCT PREVIEW
TYPE
VDSS RDS(on)
ID
Pw
STF4N150
STP4N150
STW4N150
1500 V
1500 V
1500 V
<7
<7
<7
4 A (*)
4A
4A
40 W
160 W
160 W
s TYPICAL RDS(on) = 5
s AVALANCHE RUGGEDNESS
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s HIGH SPEED SWITCHING
3
2
1
TO-220
3
2
1
TO-220FP
DESCRIPTION
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has de-
signed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
s SWITCH MODE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE
STF4N150
STP4N150
STW4N150
MARKING
F4N150
P4N150
W4N150
PACKAGE
TO-220FP
TO-220
TO-247
PACKAGING
TUBE
TUBE
TUBE
Rev. 1
March 2005
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/9

1 page




STW4N150 pdf
STP4N150 - STF4N150 - STW4N150
www.DataSheet4U.com
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
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