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PEMB30 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PEMB30
Beschreibung PNP/PNP double resistor-equipped transistors
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 10 Seiten
PEMB30 Datasheet, Funktion
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors;
R1 = 2.2 k, R2 = open
Rev. 01 — 31 March 2006
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages.
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Table 1. Product overview
Type number
Package
Philips
PEMB30
SOT666
PUMB30
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD30
PUMD30
NPN/NPN
complement
PEMH30
PUMH30
1.2 Features
I 100 mA output current capability
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
1.3 Applications
I Low current peripheral driver
I Control of IC inputs
I Cost-saving alternative for BC857BS
and BC857BV
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min Typ Max Unit
--
--
1.54 2.2
50
100
2.86
V
mA
k






PEMB30 Datasheet, Funktion
Philips Semiconductors
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open
10. Soldering
2.65
0.60
(2×)
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2.35
solder paste
solder lands
solder resist
occupied area
0.50
(4×)
0.50
(4×)
1.20
2.40
Dimensions in mm
Fig 5. Reflow soldering footprint SOT363 (SC-88)
5.25
0.40
(2×)
0.90
2.10
MSA432
4.50
0.30 1.00 4.00
solder lands
solder resist
occupied area
Dimensions in mm
1.15
3.75
transport direction during soldering
Fig 6. Wave soldering footprint SOT363 (SC-88)
sot363
PEMB30_PUMB30_1
Product data sheet
Rev. 01 — 31 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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