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MW6S010GNR1 Schematic ( PDF Datasheet ) - Freescale Semiconductor

Teilenummer MW6S010GNR1
Beschreibung LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Hersteller Freescale Semiconductor
Logo Freescale Semiconductor Logo 




Gesamt 20 Seiten
MW6S010GNR1 Datasheet, Funktion
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ =
125 mA, Pout = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
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Feedback for Broadband Stability
to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MW6S010N
Rev. 3, 5/2006
MW6S010NR1
MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MW6S010NR1
CASE 1265A - 02, STYLE 1
TO - 270- 2 GULL
PLASTIC
MW6S010GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
61.4
0.35
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1.2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
1






MW6S010GNR1 Datasheet, Funktion
www.DataSheet4U.com
TYPICAL CHARACTERISTICS — 900 MHz
50
VDD = 28 Vdc
40
IDQ = 125 mA
f = 945 MHz
− 10
− 20
30 −30
20 Gps
− 40
ηD
10
− 50
ACPR
0 −60
0.1 1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
20
19 TC = −30_C
18 25_C
85_C
17
− 30_C
Gps
25_C
50
85_C
ηD 40
30
20
16 VDD = 28 Vdc 10
IDQ = 125 mA
f = 945 MHz
15 0
0.1 1 10 100
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
19
IDQ = 125 mA
f = 945 MHz
18
17
16
20 V 24 V 28 V 32 V
VDD = 12 V 16 V
15
0 2 4 6 8 10 12 14 16
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
24 5
20 S21 0
16 −5
12 −10
8
VDD = 28 Vdc
4 Pout = 10 W CW
IDQ = 125 mA
0
500 600 700 800
S11
900 1000 1100 1200
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
− 15
− 20
− 25
MW6S010NR1 MW6S010GNR1
6
RF Device Data
Freescale Semiconductor

6 Page









MW6S010GNR1 pdf, datenblatt
www.DataSheet4U.com
Zo = 25 Ω
Zsource
f = 500 MHz
f = 500 MHz
f = 400 MHz
f = 400 MHz
Zload
VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP
f
MHz
Zsource
Ω
Zload
Ω
400 9.0 + j3.8
420 8.8 + j5.4
15.0 + j1.4
14.3 + j3.3
440 9.6 + j6.6
15.0 + j4.7
460 10.6 + j9.5
16.3 + j7.3
480 10.7 + j12.6 16.4 + j11.1
500 11.5 + j13.9 16.9 + j12.7
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 20. Series Equivalent Source and Load Impedance — 450 MHz
MW6S010NR1 MW6S010GNR1
12
RF Device Data
Freescale Semiconductor

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