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PDF FQD6N60C Data sheet ( Hoja de datos )
| Número de pieza | FQD6N60C | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQD6N60C
600V N-Channel MOSFET
Features
• 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V
• Low gate charge ( typical 16 nC )
• Low Crss ( typical 7 pF)
• Fast switching
• 100 % avalanche tested
www.Dat•aSIhmeperot4vUed.cdovm/dt capability
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
GS
D-PAK
FQD Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
G!
D
!
●
◀▲
●
●
!
S
FQD6N60C
600
4
2.4
16
± 30
300
4.0
8.0
4.5
80
0.78
-55 to +150
300
Typ
--
--
--
Max
1.56
50
110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQD6N60C Rev. A
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
3mA
www.DataSheet4U.com
DUT
Qg
Qgd
Charge
10V
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
FQD6N60C Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQD6N60C.PDF ] | |
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