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PDF MC13821 Data sheet ( Hoja de datos )
| Número de pieza | MC13821 | |
| Descripción | Low Noise Amplifier | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Data Sheet: Technical Data
Document Number: MC13821
Rev. 1.5, 09/2009
MC13821
MC13821
Low Noisewww.DataSheet4U.com Amplifier with Bypass
Switch
Package Information
Plastic Package
Case 1345
(QFN–12)
Ordering Information
Device
MC13821
Device Marking or
Operating
Temperature Range
821
Package
QFN-12
1 Introduction
The MC13821 is a high gain LNA with extremely low
noise figure, designed for cellular, GPS and ISM band
applications. An integrated bypass switch is included to
preserve input intercept performance. The input and
output match are external to allow maximum design
flexibility. The MC13821 is fabricated using Freescale's
advanced RF BiCMOS process using the SiGe:C option
and is packaged in the QFN-12 leadless package.
Contents:
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Electrical Specifications . . . . . . . . . . . . . . . . 3
3 Application Information . . . . . . . . . . . . . . . . 10
4 Printed Circuit Board . . . . . . . . . . . . . . . . . . 28
5 Scattering Parameters . . . . . . . . . . . . . . . . . 32
6 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
7 Reference Documentation . . . . . . . . . . . . . . 42
8 Revision History . . . . . . . . . . . . . . . . . . . . . . 42
1.1 Features
• RF Input Frequency: 1000 MHz to 2.4 GHz
• Gain: 16.4 dB (typ) at 1960 MHz and 15.7 dB
(typ) at 2140 MHz
• Output 3rd Order Intercept Point (OIP3): 17.4
dBm (typ) at 1960 MHz and 19.7 dBm (typ) at
2140 MHz
• Noise Figure (NF): 1.25 dB (typ) at 1960 MHz
and 1.3 dB (typ) at 2140 MHz
• 1dB Compression Point (P1dB): -6 dBm (typ) at
1960 MHz and -5 dBm (typ) at 2140 MHz
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2005–2009. All rights reserved.
1 page  
Electrical Specifications
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic
Symbol Minimum Typical Maximum Unit
1960 MHz (R1 = 1.3 kΩ, R2 = 68 Ω, C1 = 15 pF, C2 = 1.2 pF, L1 = 5.6 nH) (Refer to Figure 10)
Frequency
Active Gain
Active Noise Figure
Active Input Third Order Intercept Point
f — 1960 — MHz
G 10.5 11.5 13 dB
NF 1.1 1.3 1.9 dB
IIP3 -2
0
1 dBm
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
www.DaBtyapSahseseNt4oUi.sceoFmigure
Bypass Input Third Order Intercept Point
P1dB
-15
-10
— dBm
ICC 3.6 4.5 5.5 mA
G -6.5 -3.5 -3 dB
NF 3.8 4.7
6 dB
IIP3 20 21 22 dBm
Bypass Current
2 4 20 µA
1960 MHz (R1 = 1.8 kΩ, R2 = 330 Ω, C1 = 8 pF, C2 = 1.2 pF, L1 = 4.7 nH) (Refer to Figure 10)
Frequency
f — 1960 — MHz
Active Gain
G 13.8 14.8 16 dB
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
NF 1.1 1.3 1.9 dB
IIP3 -2
0
1 dBm
P1dB
-10
-5
-4 dBm
ICC 2.3 2.8 5.5 mA
G -6.5 -3.5 -3 dB
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
2140 MHz (Refer to Figure 11)
NF 3.8
IIP3 16
2
4.7 6 dB
18 18.5 dBm
4 20 µA
Frequency
Active Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75 V
Bypass Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
f
G
NF
IIP3
P1dB
ICC
G
NF
IIP3
—
14.7
1.1
2.5
-6.0
2.3
-4.2
3.0
22.5
2140
15.7
1.3
3.5
-5
2.8
-3.2
4.2
24.5
— MHz
17.5 dB
1.5 dB
4.5 dBm
-4 dBm
3.8 mA
-2.2 dB
6 dB
25.5 dBm
Bypass Current
2 4 20 µA
Freescale Semiconductor
MC13821 Data Sheet: Technical Data, Rev. 1.5
5
5 Page 
Application Information
Application information for 1575, 1960, 2140 and 2400 MHz are shown. For each application, two current
drain examples are provided. Typical RF performance is shown for two values of bias resistor R1: 1.2 kΩ
and 2 kΩ, see Table 6, Table 7, Table 8, and Table 9. These two current drain states offer variation in
intercept point, gain, and noise figure. For 1960 and 2140 MHz, additional application circuits are shown.
These demonstrate specific performance characteristics and utilize varying input and output matches and
different biasing resistors.
Measurements are made at a bias of VCC = 2.75 V. Freq. spacing for IP3 measurements is 200 kHz.
Non-linear measurements are made at Pin = -30 dB. The board loss corrections for these boards are: Input
0.16 dB, Output 0.2 dB. Gain and NF results incorporate these corrections in order to better reflect the
actual performance of the device.
3.1 1575 MHz Application
www.DTahtaiSshaepept4lUi.ccaotmion circuit was designed to provide NF < 1.2 dB, S21 gain > 18 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 1575 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 6.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
NC NC NC
12 11 10
N
C
1
Vcc1
C5
.01uf
C6
33 pf
2
LNA
OUT
C12
pf
L2
5.6 nH
3
R2
680
MC13821
1575 MHz
LNA
Logic
9
8
7
C3
33 pf
C4
.01uf
Vcc3
4
R1
2k
Rbias
56
L1
5.6 nH
C1
22pF
LNA IN
Figure 9. 1575 MHz LNA Application Schematic
Gnd
Gain
Enable
Freescale Semiconductor
MC13821 Data Sheet: Technical Data, Rev. 1.5
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MC13821.PDF ] | |
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