|
|
PDF MRF9180 Data sheet ( Hoja de datos )
| Número de pieza | MRF9180 | |
| Descripción | 26 V LATERAL N-CHANNEL RF POWER MOSFETs | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF9180 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power –
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW
www.Dat•aShIneteetr4nUa.cllyomMatched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
Order this document
by MRF9180/D
MRF9180
MRF9180S
880 MHz, 170 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–04, STYLE 1
NI–1230
MRF9180
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 375E–03, STYLE 1
NI–1230S
MRF9180S
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
388
2.22
–65 to +200
200
Class
1 (Minimum)
M1 (Minimum)
Max
0.45
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9180 MRF9180S
1
1 page  
C13
VGG
L1
C1
www.DataSheet4U.com
B2 B4
C14
R1
MRF9180
900MHz
PUSH PULL
Rev 01
C10 C16
B6
C22
L3
C4 C6
C5
C7
C8
R2 C9
C12
C17
C18
C15 L2
C21
C26 C27 C28 VDD
L4
C20
C19 C29
C11 VGG
B1 B3
B5 C23 C24 C25 VDD
Figure 2. 880 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9180 MRF9180S
5
5 Page 
PACKAGE DIMENSIONS
2X Q
AA
bbb M T A M B M
G4
L
B
12
4X K
34
4X
D
aaa M T A M B M
www.DataSheet4U.com
ccc M T A M B M
N
(LID)
B
(FLANGE)
H
ccc M T A M
R
(LID)
BM
F
S
(INSULATOR)
C
bbb M T A M B M
E PIN 5
T
SEATING
PLANE
M
(INSULATOR)
bbb M T A M B M
CASE 375D–04
ISSUE C
NI–1230
MRF9180
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
INCHES
DIM MIN MAX
A 1.615 1.625
B 0.395 0.405
C 0.150 0.200
D 0.455 0.465
E 0.062 0.066
F 0.004 0.007
G 1.400 BSC
H 0.079 0.089
K 0.117 0.137
L 0.540 BSC
M 1.219 1.241
N 1.218 1.242
Q 0.120 0.130
R 0.355 0.365
S 0.365 0.375
aaa 0.013 REF
bbb 0.010 REF
ccc 0.020 REF
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
MIN MAX
41.02 41.28
10.03 10.29
3.81 5.08
11.56 11.81
1.57 1.68
0.10 0.18
35.56 BSC
2.01 2.26
2.97 3.48
13.72 BSC
30.96 31.52
30.94 31.55
3.05 3.30
9.01 9.27
9.27 9.53
0.33 REF
0.25 REF
0.51 REF
AA
(FLANGE)
L
4X Z
B
12
4X K
E
34
4X
D
aaa M T A M B M
B
(FLANGE)
H
ccc M T A M
R
(LID)
BM
F
ccc M T A M B M
N
(LID)
C
PIN 5
M
(INSULATOR)
bbb M T A M B M
T
SEATING
PLANE
S
(INSULATOR)
bbb M T A M
BM
CASE 375E–03
ISSUE C
NI–1230S
MRF9180S
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 1.325 1.335
B 0.395 0.405
C 0.150 0.200
D 0.455 0.465
E 0.062 0.066
F 0.004 0.007
H 0.079 0.089
K 0.117 0.137
L 0.540 BSC
M 1.219 1.241
N 1.218 1.242
R 0.355 0.365
S 0.365 0.375
Z 0 0.040
aaa 0.013 REF
bbb 0.010 REF
ccc 0.020 REF
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
MIN MAX
33.66 33.91
10.03 10.29
3.81 5.08
11.56 11.81
1.57 1.68
0.10 0.18
2.01 2.26
2.97 3.48
13.72 BSC
30.96 31.52
30.94 31.55
9.01 9.27
9.27 9.53
0 1.02
0.33 REF
0.25 REF
0.51 REF
MOTOROLA RF DEVICE DATA
MRF9180 MRF9180S
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF9180.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF9180 | 26 V LATERAL N-CHANNEL RF POWER MOSFETs | Motorola Semiconductors |
| MRF9180S | 26 V LATERAL N-CHANNEL RF POWER MOSFETs | Motorola Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |