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PDF MRF9135LSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF9135LSR3 | |
| Descripción | 26 V LATERAL N-CHANNEL RF POWER MOSFETs | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9135L/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical N–CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA
IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
750 kHz: –47 dBc @ 30 kHz BW
www.Dat•aShIneteetr4nUa.cllyomMatched, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF9135L
MRF9135LR3
MRF9135LSR3
880 MHz, 135 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF9135L
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC > = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465A–06, STYLE 1
NI–780S
MRF9135LSR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
+15, –0.5
298
1.7
–65 to +200
200
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
Symbol
RθJC
Max
0.6
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
1
1 page  
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
19 35
18 Gps
17 η
VDD = 26 Vdc
16 Pout = 25 W (Avg.)
15
IDQ = 1100 mA
N-CDMA IS-95 Pilot, Sync, Paging
14
Traffic Codes 8 through 13
IRL
13
ACPR
12
30
25
20
-20
-30
-40
-50
11
860
865 870 875 880 885 890 895
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit
Performance
-60
900
-10
-12
-14
-16
-18
19
18.5
18 IDQ = 1650 mA
17.5 1320 mA
17 1100 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
16.5 880 mA
16
15.5
1
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
-10
VDD = 26 Vdc
-20 IDQ = 1100 mA
f1 = 880 MHz, f2 = 880.1 MHz
-30
-40
-50 3rd Order
-60 5th Order
7th Order
-70
-80
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
-20 VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
-30
-40 IDQ = 880 mA
1650 mA
-50
1320 mA
1100 mA
-60
1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
20 50
18
Gps
16
40
30
14 20
12
η
10
1
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz
10 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
10
0
MOTOROLA RF DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
www.DataSheeHt4U.com
E
A
G
1
2X Q
bbb M T A M B M
2
D
bbb M T A M
A
(FLANGE)
3
K
BM
M (INSULATOR)
bbb M T A M
N (LID)
ccc M T A M
C
T
SEATING
PLANE
B M ccc M
B M aaa M
CASE 465–06
ISSUE F
NI–780
MRF9135L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
T A M BM
S (INSULATOR)
T A M BM
F
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
4X U
(FLANGE)
B
4X Z
(LID)
1
B
(FLANGE)
H
E
A
2
D
bbb M T A M
A
(FLANGE)
2X K
BM
N (LID)
ccc M T A M
M (INSULATOR)
bbb M T A M
3C
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
CASE 465A–06
ISSUE F
NI–780S
MRF9135LSR3
F
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U --- 0.040
Z --- 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
--- 1.02
--- 0.76
0.127 REF
0.254 REF
0.381 REF
MOTOROLA RF DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF9135LSR3.PDF ] | |
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