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Número de pieza | MRF9100SR3 | |
Descripción | 26 V LATERAL N-CHANNEL RF POWER MOSFETs | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MRF9100SR3 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9100/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 26 volt base station equipment.
• On–Die Integrated Input Match
• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
Output Power, P1dB — 110 Watts (Typ)
Power Gain @ P1dB — 16.5 dB (Typ)
Efficiency @ P1dB — 53% (Typ)
• Integrated ESD Protection
www.Dat•aShDeeesti4gUn.cedomfor Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
100 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9100
MRF9100R3
MRF9100SR3
GSM/EDGE 900 MHz, 110 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
(NI–780)
(MRF9100)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465A–06, STYLE 1
(NI–780S)
(MRF9100SR3)
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
+15, –0.5
175
1.0
–65 to +200
200
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Symbol
RθJC
Max
1.0
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9100 MRF9100R3 MRF9100SR3
1
1 page +
C3 C1
R1
U1
VGG 1
R2 P1
+
C13
R3 R5
T1
R4 R6
C2
+ + VDD
C5 C14 C4
www.DataSheet4U.com
RF
INPUT
Z1
Z2
C6
Z6
C9
Z7
C7
Z3
Z4
C8
Z5
C10
Z9 Z10
C11
Z8
Figure 3. MRF9100 Demo Board Schematic
Z11
Z12
RF
OUTPUT
Z13
C12
MOTOROLA RF DEVICE DATA
MRF9100 MRF9100R3 MRF9100SR3
5
5 Page PACKAGE DIMENSIONS
B
B
(FLANGE)
www.DataSheeHt4U.com
E
A
G
1
2X Q
bbb M T A M B M
2
D
bbb M T A M
A
(FLANGE)
3
K
BM
M (INSULATOR)
bbb M T A M
N (LID)
ccc M T A M
C
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
F
CASE 465–06
ISSUE F
(NI–780)
(MRF9100)
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
4X U
(FLANGE)
B
4X Z
(LID)
1
B
(FLANGE)
H
E
A
2
D
bbb M T A M
A
(FLANGE)
2X K
BM
N (LID)
ccc M T A M
M (INSULATOR)
bbb M T A M
3C
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
CASE 465A–06
ISSUE F
(NI–780S)
(MRF9100SR3)
F
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U --- 0.040
Z --- 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
--- 1.02
--- 0.76
0.127 REF
0.254 REF
0.381 REF
MOTOROLA RF DEVICE DATA
MRF9100 MRF9100R3 MRF9100SR3
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet MRF9100SR3.PDF ] |
Número de pieza | Descripción | Fabricantes |
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