LP3000P100 Schematic ( PDF Datasheet ) - Filtronic Compound Semiconductors

Teilenummer	LP3000P100
Beschreibung	PACKAGED 2W POWER PHEMT
Hersteller	Filtronic Compound Semiconductors
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Gesamt 3 Seiten • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP3000P100 PACKAGED 2W POWER PHEMT • DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages. The LP3000P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Symbol IDSS P-1dB G-1dB PAE Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude frequency=15 GHz IMAX GM IGSO VP |VBDGS| |VBDGD| Test Conditions VDS = 2 V; VGS = 0 V VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS VDS = 8 V; IDS = 50% IDSS; PIN = 17 dBm VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 5 mA IGS = 8 mA IGD = 8 mA Min Typ Max Units 800 975 1100 mA 31.5 33 dBm 78 dB 45 % 700 -0.25 -12 1700 900 15 -1.2 -15 130 -2.0 mA mS µA V V -12 -16 V Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: sales@filss.com
Seiten	Gesamt 3 Seiten
PDF Download	[ LP3000P100 Schematic.PDF ]

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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
LP3000P100	PACKAGED 2W POWER PHEMT	Filtronic Compound Semiconductors
LP3000P100	PACKAGED 2W POWER PHEMT	Filtronic Compound Semiconductors

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