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H55S2562JFR-60M Schematic ( PDF Datasheet ) - Hynix Semiconductor

Teilenummer H55S2562JFR-60M
Beschreibung 256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
Hersteller Hynix Semiconductor
Logo Hynix Semiconductor Logo 




Gesamt 30 Seiten
H55S2562JFR-60M Datasheet, Funktion
www.DataSheet4U.com
256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
Specification of
256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.1 / July. 2009
1






H55S2562JFR-60M Datasheet, Funktion
11
256Mbit (16Mx16biwtw)wM.DoatbaSihleeeSt4DU.cRom
H55S2562JFR Series
256Mb Mobile SDR SDRAM ORDERING INFORMATION
Part Number
Clock Frequency
CAS
Latency
Organization Interface
Operating
temperature
54Ball FBGA
H55S2562JFR-60M
H55S2562JFR-75M
H55S2562JFR-A3M
166MHz
133MHz
105MHz
3
3
4banks x 4Mb
x 16
LVCMOS
Mobile Temp Lead & Halogen
(-30oC ~ 85oC)
Free
3
Rev 1.1 / July. 2009
6

6 Page









H55S2562JFR-60M pdf, datenblatt
11
256Mbit (16Mx16biwtw)wM.DoatbaSihleeeSt4DU.cRom
H55S2562JFR Series
DC CHARACTERISTICS III - Low Power (IDD6)
Temp.
(oC)
45
85
4 Banks
200
320
Memory Array
2 Banks
150
280
1 Bank
130
250
Unit
uA
uA
Notes:
1. VDD / VDDQ = 1.8V
2. Related numerical values in this 45oC are examples for reference sample value only.
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will automatically adjust the in-
terval of self-refresh operation according to ambient temperature variations.
Rev 1.1 / July. 2009
12

12 Page





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