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Teilenummer | H55S2532JFR-A3M |
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Beschreibung | 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O | |
Hersteller | Hynix Semiconductor | |
Logo | ||
Gesamt 30 Seiten www.DataSheet4U.com
256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O
Specification of
256M (8Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 2,097,152 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Nov. 2008
1
11256Mbit (8Mx32bit) Mobile SDR
H55Sw2w6w2.D2aJtaFSRheSeet4rUi.ecsom
H55S2532JFR Series
256Mb Mobile SDR SDRAM ORDERING INFORMATION
Part Number
Clock Frequency
CAS
Latency
Page Size
Org.
Interface
Operating
temperature
90Ball
FBGA
H55S2622JFR-60M
H55S2622JFR-75M
H55S2622JFR-A3M
H55S2532JFR-60M
H55S2532JFR-75M
H55S2532JFR-A3M
166MHz
133MHz
105MHz
166MHz
133MHz
105MHz
3
3
2KBytes
(Normal)
3
3
4banks x
2Mb x 32
LVCMOS
Mobile Temp
(-30oC ~ 85oC)
Lead &
Halogen
Free
3
1KBytes
(Reduced)
3
Rev 1.0 / Nov. 2008
6
6 Page 11256Mbit (8Mx32bit) Mobile SDR
H55Sw2w6w2.D2aJtaFSRheSeet4rUi.ecsom
H55S2532JFR Series
DC CHARACTERISTICS II (TA= -30 to 85oC)
Parameter
Symbol
Test Condition
Speed
Unit Note
166MHz 133MHz 105MHz
Operating Current
IDD1
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
60
45
45 mA 1
Precharge Standby Cur- IDD2P CKE ≤ VIL(max), tCK = min
rent
in Power Down Mode IDD2PS CKE ≤ VIL(max), tCK = ∞
0.3 mA
0.3 mA
CKE ≥ VIH(min), CS ≥ VIH(min), tCK
= min
Precharge Standby Cur- IDD2N
rent
in Non Power Down
Input signals are changed one time
during
2clks.
5
mA
Mode
All other pins ≥ VDD-0.2V or ≤ 0.2V
IDD2NS
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
1
Active Standby Current IDD3P CKE ≤ VIL(max), tCK = min
in Power Down Mode IDD3PS CKE ≤ VIL(max), tCK = ∞
5
mA
3
CKE ≥ VIH(min), CS ≥ VIH(min), tCK
= min
Active Standby Current
IDD3N
Input signals are changed one time
during
10
in Non Power Down
2clks.
mA
Mode
All other pins ≥ VDD-0.2V or ≤ 0.2V
IDD3NS
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
5
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL=0mA
All banks active
65 55 55 mA 1
Auto Refresh Current IDD5 tRFC ≥ tRFC(min),
100 mA
Self Refresh Current
IDD6 CKE ≤ 0.2V
See Next Page
mA 2
Standby Current in
Deep Power Down Mode
IDD7
See p.49~50
10 uA
Note:
1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2. See the tables of next page for more specific IDD6 current values.
Rev 1.0 / Nov. 2008
12
12 Page | ||
Seiten | Gesamt 30 Seiten | |
PDF Download | [ H55S2532JFR-A3M Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
H55S2532JFR-A3M | 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O | Hynix Semiconductor |
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