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Teilenummer | H55S1262EFP-60E |
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Beschreibung | 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O | |
Hersteller | Hynix Semiconductor | |
Logo | ||
Gesamt 30 Seiten www.DataSheet4U.com
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
Specification of
128M (8Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 2,097,152 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 /Aug. 2009
1
11
128Mbit (8Mx16bit) MobilewwSwD.DRataMSheemet4oUr.cyom
H55S1262EFP Series
128Mb Mobile SDR SDRAM ORDERING INFORMATION
Part Number
H55S1262EFP-60E
H55S1262EFP-75E
H55S1262EFP-A3E
H55S1262EFP-60M
H55S1262EFP-75M
H55S1262EFP-A3M
Clock Fre-
quency
CAS
Latency
Organization Interface
Operation
temperature
Package
166MHz
133MHz
105MHz
3
3
4banks x 2Mb x
16
LVCMOS
Extended Temp
(-25oC ~ 85oC)
54 ball
FBGA
3
166MHz
133MHz
105MHz
3
3
4banks x 2Mb x
16
LVCMOS
Mobile Temp
(-30oC ~ 85oC)
54 ball
FBGA
3
Rev 1.2 /Aug. 2009
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6 Page 11
128Mbit (8Mx16bit) MobilewwSwD.DRataMSheemet4oUr.cyom
H55S1262EFP Series
DC CHARACTERISTICS III
Temp.
( oC)
45
85
4 Banks
135
250
Memory Array
2 Banks
125
185
1 Bank
120
170
Unit
uA
uA
Notes:
1. VDD / VDDQ = 1.7V min to 1.95V max
2. Related numerical values in this 45oC are examples for reference sample value only.
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will automatically
adjust the interval of self-refresh operation according to ambient temperature variations.
Rev 1.2 /Aug. 2009
12
12 Page | ||
Seiten | Gesamt 30 Seiten | |
PDF Download | [ H55S1262EFP-60E Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
H55S1262EFP-60E | 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O | Hynix Semiconductor |
H55S1262EFP-60M | 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O | Hynix Semiconductor |
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