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PDF STE250N06 Data sheet ( Hoja de datos )
| Número de pieza | STE250N06 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
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STE250N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR IN ISOTOP PACKAGE
TYPE
STE250N06
VDSS
60 V
RDS(on)
< 0.004 Ω
ID
250 A
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
(SEE STH80N06 FOR RATING)
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth JUNCTION TO CASE
s VERY LOW DRAIN TO CASE CAPACITANCE
s VERY LOW INTERNAL PARASITIC
INDUCTANCE (TYPICALLY < 5 nH)
s ISOLATED PACKAGE UL RECOGNIZED
(FILE No E81743)
INDUSTRIAL APPLICATIONS:
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
1
2
4
3
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-Gate Voltage (RGS = 20 kΩ)
VGS Gate-Source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withstand Voltage (AC-RMS)
(•) Pulse width limited by safe operating area
May 1995
Value
60
60
± 20
250
155
750
450
3.6
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
V
1/8
1 page  
Capacitance Variations
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STE250N06
Normalized Gate Threshold Voltage vs
Temperature
Normalized Breakdown Voltage vs Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STE250N06.PDF ] | |
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| STE250N06 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STMicroelectronics |
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