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BF1207 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BF1207
Beschreibung Dual N-channel dual gate MOSFET
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 22 Seiten
BF1207 Datasheet, Funktion
BF1207
Dual N-channel dual gate MOSFET
Rev. 01 — 28 July 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment






BF1207 Datasheet, Funktion
Philips Semiconductors
BF1207www.DataSheet4U.com
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8: Dynamic characteristics for amplifier A
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA. [1]
Symbol Parameter
Conditions
yfs
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
power gain
noise figure
cross-modulation
Tj = 25 °C
f = 100 MHz
f = 1 MHz
f = 100 MHz
f = 100 MHz
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V.
[2] Measured in Figure 29 test circuit.
Min Typ
25 30
- 2.2
- 3.5
- 0.9
- 20
Max Unit
40 mS
2.7 pF
- pF
- pF
- fF
30
26
21
-
-
-
[2]
34
30
25
3.0
1.3
1.4
38 dB
34 dB
29 dB
- dB
- dB
- dB
90 -
- 90
- 99
100 105
-
-
-
-
dBµV
dBµV
dBµV
dBµV
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
6 of 22

6 Page









BF1207 pdf, datenblatt
Philips Semiconductors
BF1207www.DataSheet4U.com
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
Table 10: Dynamic characteristics for amplifier B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 14 mA. [1]
Symbol Parameter
Conditions
Min Typ
yfs
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance Tj = 25 °C
input capacitance at gate1 f = 100 MHz
26
-
input capacitance at gate2 f = 1 MHz
-
output capacitance
f = 100 MHz
-
reverse transfer capacitance f = 100 MHz
-
power gain
noise figure
cross-modulation
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz
at 0 dB AGC
30
27
23
-
-
-
[2]
90
31
1.8
3.5
0.8
20
34
31
27
5
1.3
1.4
-
at 10 dB AGC
- 88
at 20 dB AGC
- 94
at 40 dB AGC
100 103
Max Unit
41 mS
2.3 pF
- pF
- pF
- fF
38 dB
35 dB
31 dB
- dB
- dB
- dB
- dBµV
- dBµV
- dBµV
- dBµV
[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.
[2] Measured in Figure 30 test circuit.
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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12 Page





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