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PDF Si5499DC Data sheet ( Hoja de datos )
| Número de pieza | Si5499DC | |
| Descripción | P-Channel 1.5-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
P-Channel 1.5-V (G-S) MOSFET
Si5499DC
wVwwis.DhaataySheSeitl4iUc.coonmix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.036 at VGS = - 4.5 V
- 8 0.045 at VGS = - 2.5 V
0.056 at VGS = - 1.8 V
0.077 at VGS = - 1.5 V
ID (A)e
-6
-6
-6
-6
Qg (Typ.)
14 nC
1206-8 ChipFET®
1
D
DD
DD
Marking Code
D
S
G
BP XXX
Lot Traceability
and Date Code
Part #
Code
Bottom View
Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET® Power MOSFET: 1.5 V Rated
• Ultra-Low On-Resistance
APPLICATIONS
RoHS
COMPLIANT
• Load Switch for Portable Devices
- Guaranteed Operation at VGS = 1.5 V Critical for
Optimized Design and Longer Battery Life
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a, b
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
IDM
Continuous Source-Drain Diode Currenta, b
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa, b
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)c, d
Limit
-8
±5
- 6e
- 6e
- 6a, b, e
- 5.6a, b
- 25
- 5.2
- 2.1a, b
6.2
4
2.5a, b
1.6a, b
- 55 to 150
260
Unit
V
A
W
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 0.10
TJ = 150 °C
10
TJ = 25 °C
0.08
0.06
0.04
TA = 25 °C
Si5499DC
wVwwis.DhaatayShSeeitl4iUc.oconmix
ID = 5.1 A
TA = 125 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
0.7
0.02
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.6
ID = 250 µA
0.5
40
30
0.4 20
0.3 10
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by rDS(on)*
10
1
0.1 TA = 25 °C
Single Pulse
0
0.001 0.01
0.1
1
10 100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73321
S-80193-Rev. B, 04-Feb-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si5499DC.PDF ] | |
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