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K6F8016U6D Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K6F8016U6D
Beschreibung 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 9 Seiten
K6F8016U6D Datasheet, Funktion
K6F8016U6D Family
CMwOwwS.DaStaRSheAetM4U.com
Document Title
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Updated DC parameters (ICC1, ICC2, ISB1, IDR)
1.0 Finalized
- Added Lead-Free Products.
Draft Date
April 26, 2004
Remark
Preliminary
September 13, 2004 Preliminary
January 31, 2005 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
January 2005






K6F8016U6D Datasheet, Funktion
K6F8016U6D Family
CMwOwwS.DaStaRSheAetM4U.com
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL)
Address
Data Out
tRC
tOH
Previous Data Valid
tAA
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS1
tAA
tCO
tRC
tOH
CS2
UB, LB
OE
Data out
High-Z
tBA
tOE
tOLZ
tBLZ
tLZ
Data Valid
tHZ
tBHZ
tOHZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6 Revision 1.0
January 2005

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