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Número de pieza | 2PB1424 | |
Descripción | 20V - 3A PNP low VCEsat transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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20 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 01 — 2 May 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
NPN complement: 2PD2150.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCEO
ICM
collector-emitter voltage
peak collector current
hFE DC current gain
Conditions
open base
single pulse;
tp ≤ 1 ms
VCE = −2 V;
IC = −0.1 A
Min Typ Max
- - −20
- - −3
180 -
390
Unit
V
A
1 page Philips Semiconductors
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = −30 V; IE = 0 A
VCB = −30 V; IE = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −2 V; IC = −0.1 A
IC = −2 A; IB = −100 mA
VBEon
fT
base-emitter turn-on
voltage
transition frequency
VCE = −10 V; IC = −5 mA
VCE = −1 V; IC = −1 A
VCE = −2 V; IC = −500 mA;
f = 100 MHz
Cc collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
2PB1424w w w . D a t a S h e e t 4 U
20 V, 3 A PNP low VCEsat (BISS) transistor
Min Typ Max Unit
- - −0.1 µA
- - −10 µA
- - −0.1 µA
180
[1] -
-
-
390
−0.5 V
- - −0.7 V
- - −1 V
- 140 - MHz
- 27 - pF
9397 750 15061
Product data sheet
Rev. 01 — 2 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 11
5 Page Philips Semiconductors
18. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
17 Contact information . . . . . . . . . . . . . . . . . . . . 10
2PB1424www.DataSheet4U.com
20 V, 3 A PNP low VCEsat (BISS) transistor
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 2 May 2005
Document number: 9397 750 15061
Published in The Netherlands
11 Page |
Páginas | Total 11 Páginas | |
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