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PDF SI2325DS Data sheet ( Hoja de datos )
| Número de pieza | SI2325DS | |
| Descripción | P-Channel 150-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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P-Channel 150-V (D-S) MOSFET
Si2325DS
Viswhwwa.yDaStaSihlieceto4Un.cioxm
PRODUCT SUMMARY
VDS (V)
−150
rDS(on) (W)
1.2 @ VGS = −10 V
1.3 @ VGS = −6.0 V
ID (A)
−0.69
−0.66
Qg (Typ)
7.7
FEATURES
D TrenchFETr Power MOSFET
D Ultra Low On-Resistance
D Small Size
APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Supplies
TO-236
(SOT-23)
G1
S2
3D
Ordering Information: Si2325DS -T1—E3
Top View
Si2325DS (D5)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −150
VGS $20
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Single-Pluse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 1.0 mH
TA = 25_C
TA = 70_C
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
−0.69
−0.55
−1.0
1.25
0.8
−1.6
4.5
1.01
−55 to 150
−0.53
−0.43
−0.6
0.75
0.48
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 73238
S-42449—Rev. A, 10-Jan-05
Symbol
RthJA
RthJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
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Si2325DS
Viswhwwa.yDaStaSihlieceto4Un.cioxm
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73238.
Document Number: 73238
S-42449—Rev. A, 10-Jan-05
www.vishay.com
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SI2325DS.PDF ] | |
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