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PDF SI7900EDN Data sheet ( Hoja de datos )
| Número de pieza | SI7900EDN | |
| Descripción | Dual N-Channel 20-V (D-S) MOSFET - Common Drain | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
Si7900EDN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.026 @ VGS = 4.5 V
20 0.031 @ VGS = 2.5 V
0.039 @ VGS = 1.8 V
PowerPAKt 1212-8
ID (A)
9
8
7
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPakt Package
– Low-Thermal Resistance, RthJC
– Low 1.07-mm Profile
D 3000-V ESD Protection
APPLICATIONS
D Protection Switch for 1-2 Li-ion Batteries
DD
3.30 mm
D
8D
7
D
6
D
5
S1
1
G1
2
3.30 mm
S2
3
G2
4
Bottom View
G1
2.4 kW
N-Channel
S1
2.4 kW
G2
N-Channel
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
96
6.4 4.3
30
2.9 1.4
3.2 1.5
1.7 0.79
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
Symbol
RthJA
RthJC
Typical
30
65
1.9
Maximum
38
82
2.4
Unit
_C/W
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New Product
Si7900EDN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Square Wave Pulse Duration (sec)
0.1
1
Document Number: 71425
S-03369—Rev. A, 02-Apr-01
www.vishay.com
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| PDF Descargar | [ Datasheet SI7900EDN.PDF ] | |
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