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PDF JDP2S01E Data sheet ( Hoja de datos )
| Número de pieza | JDP2S01E | |
| Descripción | UHF~VHF Band RF Attenuator Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Pin Type
JDP2S01E
JDP2S01E
www.DataSheet4U.com
UHF~VHF Band RF Attenuator Applications
Unit: mm
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Low series resistance: rs = 0.65 Ω (typ.)
• Low capacitance: CT = 0.65 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 30 V
IF 50 mA
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR IR = 10 μA
IR VR = 30 V
VF IF = 50 mA
CT VR = 1 V, f = 1 MHz
rs IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Min Typ. Max Unit
30 ⎯ ⎯
V
⎯ ⎯ 0.1 μA
⎯ 0.9 0.95 V
⎯ 0.65 0.8
pF
⎯ 0.65 1.0
Ω
Marking
1 2007-11-01
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet JDP2S01E.PDF ] | |
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