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LC821 Schematic ( PDF Datasheet ) - Polyfet RF Devices
| Teilenummer | LC821 |
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| Beschreibung | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
| Hersteller | Polyfet RF Devices | |
| Logo |  |
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Gesamt 2 Seiten 
polyfet rf devices
LC821
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
8.0 Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.40 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
5.0 A
Drain to
Gate
Voltage
36 V
Drain to
Source
Voltage
36 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 8.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
10
55
dB Idq = 0.40 A, Vds = 12.5 V, F = 500MHz
% Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.40 A, Vds = 12.5 V, F = 500MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
36 V Ids = 0.10 mA, Vgs = 0V
1.0 mA
Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.10 A, Vgs = Vds
gM Forward Transconductance
1.0 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.60
Ohm
Vgs = 20V, Ids = 3.00 A
Idsat
Saturation Current
7.50 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
33.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
2.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
24.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 05/01/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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| Seiten | Gesamt 2 Seiten | |
| PDF Download | [ LC821 Schematic.PDF ] | |
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