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PDF APTGT50TL60T3G Data sheet ( Hoja de datos )
| Número de pieza | APTGT50TL60T3G | |
| Descripción | Three level inverter Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT50TL60T3Gwww.DataSheet4U.com
Three level inverter
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 50A @ Tc = 80°C
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
80
50
100
±20
176
100A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-7
1 page  
APTGT50TL60T3Gwww.DataSheet4U.com
Output Characteristics (VGE=15V)
100
TJ=25°C
80 TJ=125°C
60 TJ=150°C
40
20
0 TJ=25°C
0 0.5 1 1.5 2 2.5 3
VCE (V)
Output Characteristics
100
TJ = 150°C
VGE=19V
80
VGE=13V
60
VGE=15V
40
20 VGE=9V
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
Transfert Characteristics
100
80 TJ=25°C
60
40
20 TJ=150°C
0
567
TJ=25°C
8 9 10 11 12
VGE (V)
Energy losses vs Collector Current
3.5
VCE = 300V
3 VGE = 15V
2.5
RG = 8.2Ω
TJ = 150°C
Eoff
2
1.5
1
0.5 Eon
0
0 20 40 60 80 100
IC (A)
Switching Energy Losses vs Gate Resistance
3
2.5 Eoff
2
1.5
1
0.5
0
5
VCE = 300V
VGE =15V
Eon IC = 50A
TJ = 150°C
15 25 35 45 55
Gate Resistance (ohms)
65
Reverse Bias Safe Operating Area
125
100
75
50
25
VGE=15V
TJ=150°C
RG=8.2Ω
0
0 100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.8 0.9
0.7
0.6
0.5
0.4
0.3
0.2 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
www.microsemi.com
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTGT50TL60T3G.PDF ] | |
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