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Teilenummer | PJ6694 |
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Beschreibung | 25V N-Channel Enhancement Mode MOSFET | |
Hersteller | Pan Jit International | |
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Gesamt 5 Seiten PJ6694
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@12A=12mΩ
• RDS(ON), VGS@4.5V,IDS@10A=22mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: SOIC-08 Package
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 6694
www.DataSheet4U.com
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PARAMETER
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
Avalanche Energy with Single Pulse
ID=23A, VDD=25V, L=0.5mH
Junction-to Ambient Thermal Resistance(PCB mounted)2
TA= 2 5 OC
TA= 7 5 OC
S ym b o l
VDS
V GS
ID
IDM
PD
TJ,TSTG
E AS
RθJA
Limit
25
+20
12
50
2.5
1.5
-55 to + 150
130
50
Uni ts
V
V
A
A
W
OC
mJ
OC /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
PAGE . 1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ PJ6694 Schematic.PDF ] |
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