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PDF APT100GT120JRDQ4 Data sheet ( Hoja de datos )
| Número de pieza | APT100GT120JRDQ4 | |
| Descripción | Thunderbolt IGBT | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APT100GT120JRDQ4
1200V, 100A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged-
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
• Low Tail Current • High Frequency Switching to 50KHz
• Integrated Gate Resistor • Ultra Low Leakage Current
Low EMI, High Reliability
• RoHS Compliant
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
Ratings
Unit
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ, TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
1200
±20
123
67
200
200A @ 1200V
570
-55 to 150
300
Volts
Amps
Watts
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA)
Gate Threshold Voltage (VCE = VGE, IC = 4mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Integrated Gate Resistor
Min Typ Max
1200
-
-
4.5 5.5 6.5
2.7 3.2 3.7
- 4.0 -
- - 200
- - TBD
- - 600
-5-
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
Volts
μA
nA
Ω
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10000
1000
100
Cies
Coes
Cres
10
0 100 200 300 400 500 600 700 800 900
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT100GT120JRDQ4
250 www.DataSheet4U.com
200
150
100
50
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.25
0. 2 D = 0.9
0.15
0.7
0.5
0. 1
0.3
Note:
t1
0.05
0
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1 0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
TJ (°C)
TC (°C)
Dissipated Power
(Watts)
.045
.0135 .039
.034
.0618
17.42
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
40
30
75°C
20
10
100°C
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 4.7Ω
Fmax = min (fmax, fmax2)
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
0
0 10 20 30 40 50 60 70 80 90 100
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor
Current
5 Page | ||
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| PDF Descargar | [ Datasheet APT100GT120JRDQ4.PDF ] | |
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