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PDF APT11N80KC3 Data sheet ( Hoja de datos )
| Número de pieza | APT11N80KC3 | |
| Descripción | Super Junction MOSFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT11N80KC3
www.DataSheet4U.com
800V 11A 0.450Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
TO-220
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-220 Package
GDS
D
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT11N80KC3
UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800 Volts
11
Amps
33
±20 Volts
±30
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
156
1.25
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
260
50
11
0.2
470
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.1A)
Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 680µA)
800 Volts
0.39 0.45 Ohms
0.5 20
µA
200
±100 nA
2.1 3 3.9 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
1 page  
10%
td(on)
tr
90%
Gate Voltage
TJ = 125 C
Collector Current
5% 10%
Switching Energy
5%
Collector Voltage
VDD
APT15DF60B
IC VCE
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
APT11N80KC3
90%
td(off)
90%
www.DataSheet4U.com
Gate Voltage TJ = 125 C
tf
Collector Voltage
10%
Switching Energy
0
Collector Current
TO-220AC Package Outline
1.39 (.055)
0.51 (.020)
Drain
3.42 (.135)
16.51 (.650) 2.54 (.100)
14.23 (.560)
4.08 (.161) Dia.
3.54 (.139)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
6.35 (.250)
MAX.
0.50 (.020)
0.41 (.016)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Gate
Drain
Source
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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| PDF Descargar | [ Datasheet APT11N80KC3.PDF ] | |
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