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PDF APT26GU30K Data sheet ( Hoja de datos )
| Número de pieza | APT26GU30K | |
| Descripción | POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
APT26GAPTU26G3U300K_KSA
APT26GU30SAwww.DataSheet4U.com
300V
POWER MOS 7® IGBT
TO-220
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
GCE
D2PAK
C
GE
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• SSOA rated
C
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT26GU30K_SA
UNIT
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
±20
±30
47
26
85
85A @ 300V
187
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 13A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
300
3 4.5 6
Volts
1.5 2.0
1.5
250
2500
µA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
2,000
1,000
500
Cies
Coes
100
50
10 Cres
100
80
60
40
20
APT26GU30K_SA
www.DataSheet4U.com
1
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
0 50 100 150 200 250 300 350
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
Junction
temp (°C)
RC MODEL
0.192
0.00537F
Power
(watts)
0.391
0.0342F
Case temperature(°C)
0.0860
0.432F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
300
100
Fmax = min(fmax1, fmax 2 )
50
f max 1
=
t d (on )
+
0.05
t r + t d(off )
+
tf
TJ = 125°C
TC = 75°C
D = 50 %
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
VCE = 200V
RG = 20Ω
10
Pdiss
=
TJ − TC
R θJC
5 10 15 20 25 30 35 40 45
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT26GU30K.PDF ] | |
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