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VMM1500-0075P Schematic ( PDF Datasheet ) - IXYS Corporation

Teilenummer VMM1500-0075P
Beschreibung Dual Power MOSFET Module
Hersteller IXYS Corporation
Logo IXYS Corporation Logo 




Gesamt 2 Seiten
VMM1500-0075P Datasheet, Funktion
Dual Power
MOSFET Module
Phaseleg Configuration
Preliminary data
www.DataSheet4U.com
VMM 1500-0075P
VDSS = 75 V
ID25 = 1500 A
RDS(on) = 0.55 m
3
8
91
11
10 2
MOSFET T1 + T2
Symbol
VDSS
VGS
ID25
ID80
IF25
IF80
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
(diode) TC = 25°C
(diode) TC = 80°C
Maximum Ratings
75 V
±20 V
1500
1200
A
A
1500
1100
A
A
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon
VGS = 10 V; ID = ID80
VGSth
VDS = 20 V; ID = 10 mA
2
IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
IGSS VGS = ±20 V; VDS = 0 V
Qg
Q
gs
VGS= 10 V; VDS = 60 V; ID = 500 A
Qgd
td(on)
t
r
td(off)
t
f
V = 10 V; V = 30 V;
GS DS
ID = 250 A; RG = 1
VF
(diode)
I
F
=
750
A;
VGS
=
0
V
trr (diode) IF = 200 A; -di/dt = 1000 A/µs; VDS = 30 V
RthJC
RthJS
with heat transfer paste
additional current limitation by external leads
0.55
1.5
2480
330
940
60
170
320
200
1.2
90
0.12
0.8 m
4V
0.15 mA
mA
1.5 µA
nC
nC
nC
ns
ns
ns
ns
1.6 V
ns
0.06 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
Features
• Trench MOSFETs
– low RDSon
– optimized intrinsic reverse diode
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies with low input voltage,
e.g. from fuel cells or solar cells
1-2





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